Simplify circuit design using ROHM DTC043EMT2L NPN digital transistor with integrated bias resistors

Key Attributes
Model Number: DTC043EMT2L
Product Custom Attributes
Output Voltage(VO(on)):
150mV@5mA,0.5mA
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC043EMT2L
Package:
SOT-723
Product Description

Product Overview

The DTC043E series is a family of NPN digital transistors featuring built-in bias resistors (R1 = R2 = 4.7k). This integration simplifies circuit design by eliminating the need for external input resistors, enabling inverter circuit configurations with straightforward on/off condition settings. These transistors are ideal for applications such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA043E series.

Product Attributes

  • Brand: ROHM
  • Type: NPN Digital Transistor (Bias Resistor Built-in Transistor)

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking VCC (V) IC(MAX.) (mA) R1 (k) R2 (k)
DTC043EM SOT-723 (VMT3) 1212 T2L 180 8 8000 47 50 100 4.7 4.7
DTC043EEB SOT-416FL (EMT3F) 1616 TL 180 8 3000 47 50 100 4.7 4.7
DTC043EUB SOT-323FL (UMT3F) 2021 TL 180 8 3000 47 50 100 4.7 4.7
Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta = 25C)
Supply voltage VCC 50 V
Input voltage VIN -10 30 V
Output current IO 100 mA
Collector current IC(MAX)*1 100 mA
Power dissipation PD*2 DTC043EM 150 mW
Power dissipation PD*2 DTC043EEB 150 mW
Power dissipation PD*2 DTC043EUB 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 150
Electrical Characteristics (Ta = 25C)
Input voltage (OFF) VI(off) VCC = 5V, IO = 100A - - 0.5 V
Input voltage (ON) VI(on) VO = 0.3V, IO = 5mA 2.2 - - V
Output voltage (ON) VO(on) IO = 5mA, II = 0.5mA - 50 150 mV
Input current II VI = 5V - - 1.8 mA
Output current (OFF) IO(off) VCC = 50V, VI = 0V - - 500 nA
DC current gain GI VO = 10V, IO = 5mA 20 - - -
Input resistance R1 - 3.29 6.11 k
Resistance ratio R2/R1 - 0.8 1.2 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.


2109191030_ROHM-DTC043EMT2L_C510323.pdf

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