Small signal dual transistor ROHM IMX1T110 featuring two independent chips in a single compact package

Key Attributes
Model Number: IMX1T110
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
180MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
IMX1T110
Package:
SOT-457
Product Description

EMX1 / UMX1N / IMX1 General Purpose Transistors

The EMX1, UMX1N, and IMX1 are general-purpose dual transistors designed for small-signal amplification. They feature two independent transistor chips within a single compact package (SOT-563, SOT-363, or SOT-457), offering advantages such as reduced mounting cost and area, and elimination of interference between transistor elements. These transistors are compatible with automatic mounting machines.

Product Attributes

  • Brand: ROHM
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Part No.PackagePackage SizeVCEO (V)IC (mA)PD (mW/Total)VCBO (V)VCEO (V)VEBO (V)IC (mA)Tj (C)Tstg (C)BVCBO (V)BVCEO (V)BVEBO (V)ICBO (nA)IEBO (nA)VCE(sat) (mV)hFEfT (MHz)Cob (pF)
EMX1SOT-563 (EMT6)161650150150*1*260507150150-55 to +15060507100100400120-5601802.0-3.5
UMX1NSOT-363 (UMT6)202150150150*1*260507150150-55 to +15060507100100400120-5601802.0-3.5
IMX1SOT-457 (SMT6)292850150300*1*360507150150-55 to +15060507100100400120-5601802.0-3.5

*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.


2007211007_ROHM-IMX1T110_C509893.pdf

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