Dual digital transistor module ROHM IMD6AT108 suitable for inverter interface and driver applications
Key Attributes
Model Number:
IMD6AT108
Product Custom Attributes
Input Resistor:
4.7kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
IMD6AT108
Package:
SOT-457
Product Description
Product Overview
The EMD6, UMD6N, and IMD6A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices offer significant advantages in terms of reduced mounting cost and area by integrating two independent transistor elements within a single package, thereby eliminating interference. They are compatible with automatic mounting machines, facilitating efficient manufacturing processes.
Product Attributes
- Brand: ROHM
- Type: Dual Digital Transistor
Technical Specifications
| Model | Package | Package Size (mm) | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMD6 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | D6 |
| UMD6N | SOT-363 (UMT6) | 2021 | TR | 180 | 8 | 3000 | D6 |
| IMD6A | SOT-457 (SMT6) | 2928 | T108 | 180 | 8 | 3000 | D6 |
Electrical Characteristics (Ta = 25C)
For DTr1 (NPN)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 500 | nA |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = 5mA, IB = 0.25mA | - | - | 300 | mV |
| DC current gain | hFE | VCE = 5V, IC = 1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | - | 3.29 | 6.11 | k |
| Transition frequency | fT*4 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
For DTr2 (PNP)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = -50A | -50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = -50A | -5 | - | - | V |
| Collector cut-off current | ICBO | VCB = -50V | - | - | -500 | nA |
| Emitter cut-off current | IEBO | VEB = -4V | - | - | -500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = -5mA, IB = -0.25mA | - | - | -300 | mV |
| DC current gain | hFE | VCE = -5V, IC = -1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | - | 3.29 | 6.11 | k |
| Transition frequency | fT*4 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | DTr1 (NPN) | DTr2 (PNP) | Unit |
|---|---|---|---|---|
| Collector-base voltage | VCBO | 50 | -50 | V |
| Collector-emitter voltage | VCEO | 50 | -50 | V |
| Emitter-base voltage | VEBO | 5 | -5 | V |
| Collector current | IC | 100 | -100 | mA |
| Power dissipation | PD*1*2 | 150 / Total | mW | |
| Power dissipation | PD*1*3 | 300 | mW | |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
Applications
- INVERTER
- INTERFACE
- DRIVER
Features
- Contains both DTA143T chip and DTC143T chip in an EMT, UMT, or SMT package.
- Mounting possible with EMT3, UMT3, or SMT3 automatic mounting machines.
- Independent transistor elements eliminate interference.
- Mounting cost and area can be cut in half.
2203081130_ROHM-IMD6AT108_C2979143.pdf
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