Dual digital transistor ROHM IMH1AT110 integrating independent chips for mounting in inverter and driver circuit designs
Key Attributes
Model Number:
IMH1AT110
Product Custom Attributes
DC Current Gain:
56@5mA,5V
Operating Temperature:
-55℃~+150℃
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
300mV@10mA,0.5mA
Input Resistor:
22kΩ
Resistor Ratio:
1
Number:
-
Pd - Power Dissipation:
300mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
IMH1AT110
Package:
SOT-457
Product Description
Product Overview
The EMH1, UMH1N, and IMH1A are general-purpose dual digital transistors designed for applications such as inverters, interfaces, and drivers. These devices integrate two independent DTC124E chips within a single SOT-563 (EMT6), SOT-363 (UMT6), or SOT-457 (SMT6) package. This integration offers significant advantages, including halved mounting costs and space requirements, while ensuring no interference between transistor elements. They are compatible with automatic mounting machines, streamlining production processes.
Product Attributes
- Brand: ROHM
- Product Series: EMH1 / UMH1N / IMH1A
- Package Types: SOT-563 (EMT6), SOT-363 (UMT6), SOT-457 (SMT6)
- Features: Dual digital transistors, independent elements, reduced mounting cost and area.
- Mounting Compatibility: EMT3, UMT3, SMT3 automatic mounting machines.
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMH1 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | H1 |
| UMH1N | SOT-363 (UMT6) | 2021 | TN | 180 | 8 | 3000 | H1 |
| IMH1A | SOT-457 (SMT6) | 2928 | T110 | 180 | 8 | 3000 | H1 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Supply voltage | VCC | 50 | V | |||
| Input voltage | VIN | -10 | 40 | V | ||
| Output current | IO | 30 | mA | |||
| Collector current | IC(MAX)*1 | 100 | mA | |||
| Power dissipation (EMH1) | PD*2*3 | 150 | mW | |||
| Power dissipation (UMH1N) | PD*2*3 | 150 | mW | |||
| Power dissipation (IMH1A) | PD*2*4 | 300 | mW | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Input voltage (off) | VI(off) | VCC = 5V, IO = 100A | 0.5 | V | ||
| Input voltage (on) | VI(on) | VO = 0.2V, IO = 5mA | 3.0 | V | ||
| Output voltage (on) | VO(on) | IO = 10mA, II = 0.5mA | 100 | 300 | mV | |
| Input current | II | VI = 5V | 360 | A | ||
| Output current (off) | IO(off) | VCC = 50V, VI = 0V | 500 | nA | ||
| DC current gain | GI | VO = 5V, IO = 5mA | 56 | - | - | |
| Input resistance | R1 | 15.4 | 22 | 28.6 | k | |
| Resistance ratio | R2/R1 | 0.8 | 1.0 | 1.2 | - | |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | 250 | - | MHz | |
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
2209081200_ROHM-IMH1AT110_C5157673.pdf
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