Siliup SP40N01AGNP N Channel MOSFET 40V Featuring Low Gate Charge and Cu Clip Process for Power Management Systems
Key Attributes
Model Number:
SP40N01AGNP
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+150℃
RDS(on):
0.75mΩ@10V;1.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
122pF
Number:
1 N-channel
Input Capacitance(Ciss):
7.515nF
Output Capacitance(Coss):
1.854nF
Pd - Power Dissipation:
180W
Gate Charge(Qg):
128nC@10V
Mfr. Part #:
SP40N01AGNP
Package:
PDFNWB-8L(5x6)
Product Description
Product Overview
The SP40N01AGNP is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing a Cu-Clip process and advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for PWM applications, hard-switched, and high-frequency circuits, as well as power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Split Gate Trench
- Process: Cu-Clip
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) Typ. | @10V | 0.75 | m | |||
| RDS(on) Typ. | @4.5V | 1.2 | m | |||
| Continuous Drain Current | ID | 200 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 40 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 200 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 135 | A | ||
| Pulsed Drain Current | IDM | 800 | A | |||
| Single Pulse Avalanche Energy | EAS | 1444 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 180 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.67 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 1 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 0.75 | 1.1 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 1.2 | 1.8 | m |
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | - | 6200 | - | pF |
| Output Capacitance | Coss | - | 2600 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 70 | - | pF | |
| Total Gate Charge | Qg | VDS=20V, VGS=10V, ID=85A | - | 128 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | nC | |
| Gate-Drain Charge | Qgd | - | 12 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V, RG=1.6, ID=85A | - | 13.5 | - | nS |
| Rise Time | Tr | - | 8.8 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 52 | - | nS | |
| Fall Time | Tf | - | 9.6 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 200 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=200A/us, TJ=25 | - | 58 | - | nS |
| Reverse Recovery Charge | Qrr | - | 85 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
2504101957_Siliup-SP40N01AGNP_C22385414.pdf
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