40V N Channel MOSFET Siliup SP40N01AGTO Featuring Fast Switching and Low Rdson for Power Applications
Key Attributes
Model Number:
SP40N01AGTO
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
350A
Operating Temperature -:
-55℃~+150℃
RDS(on):
0.65mΩ@10V;0.85mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
130pF
Number:
1 N-channel
Input Capacitance(Ciss):
11nF
Output Capacitance(Coss):
3.7nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
174nC@10V
Mfr. Part #:
SP40N01AGTO
Package:
TOLL-8L
Product Description
Product Overview
The SP40N01AGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is offered in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP40N01AGTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 0.65 | m | |||
| RDS(on)TYP | @4.5V | 0.85 | m | |||
| ID | 350 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 350 | A | |||
| Continuous Drain Current (Tc=100) | ID | 233 | A | |||
| Pulsed Drain Current | IDM | 1400 | A | |||
| Single Pulse Avalanche Energy | EAS | 2756 | mJ | |||
| Power Dissipation (Tc=25) | PD | 500 | W | |||
| Thermal Resistance (Junction-to-Case) | RJC | 0.25 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | 48 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 1 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=50A | - | 0.65 | 0.75 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=35A | - | 0.85 | 1.1 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | - | 11000 | - | pF |
| Output Capacitance | Coss | - | 3700 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 130 | - | pF | |
| Total Gate Charge | Qg | VDS=20V, VGS=10V, ID=20A | - | 174 | - | nC |
| Gate-Source Charge | Qgs | - | 36 | - | ||
| Gate-Drain Charge | Qg | - | 30 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V, RG=1.6, ID=20A | - | 28 | - | nS |
| Rise Time | Tr | - | 30 | - | ||
| Turn-Off Delay Time | Td(off) | - | 168 | - | ||
| Fall Time | Tf | - | 88 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 350 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 66 | - | nS |
| Reverse Recovery Charge | Qrr | - | 240 | - | nC | |
| TOLL Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Nom. | Max. |
| A | 2.20 | 2.30 | 2.40 |
| b | 0.65 | 0.75 | 0.85 |
| C | 0.508 | REF | |
| D | 10.25 | 10.40 | 10.55 |
| D1 | 2.85 | 3.00 | 3.15 |
| E | 9.75 | 9.90 | 10.05 |
| E1 | 9.65 | 9.80 | 9.95 |
| E2 | 8.95 | 9.10 | 9.25 |
| E3 | 7.25 | 7.40 | 7.55 |
| e | 1.20 BSC | ||
| F | 1.05 | 1.20 | 1.35 |
| H | 11.55 | 11.70 | 11.85 |
| H1 | 6.03 | 6.18 | 6.33 |
| H2 | 6.85 | 7.00 | 7.15 |
| H3 | 3.00 BSC | ||
| L | 1.55 | 1.70 | 1.85 |
| L1 | 0.55 | 0.7 | 0.85 |
| L2 | 0.45 | 0.6 | 0.75 |
| M | 0.08 REF. | ||
| 8 | 10 | 12 | |
| K | 4.25 | 4.40 | 4.55 |
2504101957_Siliup-SP40N01AGTO_C22385346.pdf
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