ROHS Compliant P Channel MOSFET Siliup SP30P08NK 30V Device with 100 Percent Single Pulse Avalanche Energy Test

Key Attributes
Model Number: SP30P08NK
Product Custom Attributes
Pd - Power Dissipation:
40W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V;11mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
-
Output Capacitance(Coss):
410pF
Input Capacitance(Ciss):
2.9nF
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
SP30P08NK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP30P08NK is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-performance applications, it features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This device has undergone 100% Single Pulse avalanche energy testing. It is suitable for use in DC-DC Converters and Motor Control applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP30P08NK
  • Package: PDFN5X6-8L
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
On-Resistance RDS(on)TYP @-10V 7.5 m
On-Resistance RDS(on)TYP @-4.5V 11 m
Continuous Drain Current ID -50 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25,unless otherwise noted) -30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (Tc=25C) -50 A
Continuous Drain Current ID (Tc=100C) -32 A
Pulse Drain Current IDM Tested -200 A
Single pulsed avalanche energy EAS 140 mJ
Power Dissipation PD (Tc=25C) 40 W
Thermal Resistance Junction-to-Case RJC 3.1 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =-10V, ID =-20A 7.5 10 m
Static Drain-Source On-Resistance RDS(ON) VGS =-4.5V, ID =-10A 11 15 m
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 2900 pF
Output Capacitance Coss 410 pF
Reverse Transfer Capacitance Crss 280 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-10A 48 nC
Gate-Source Charge Qgs 12 nC
Gate-Drain Charge Qg d 14 nC
Turn-On Delay Time Td(on) VDD=-15V,VGS=-10V,RG=3, ID=-10A 15 nS
Rise Time Tr 11 nS
Turn-Off Delay Time Td(off) 44 nS
Fall Time Tf 21 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 1.2 V
Maximum Body-Diode Continuous Current IS -50 A
Reverse recover time Trr IS=-20A, di/dt=100A/us, TJ=25 43 nS
Reverse recovery charge Qrr 25 nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP30P08NK_C41355015.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.