40V P Channel MOSFET Siliup SP40P18NJ with Low On Resistance and Single Pulse Avalanche Energy Testing

Key Attributes
Model Number: SP40P18NJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
20A
RDS(on):
18mΩ@10V;25mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 P-Channel
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
1.75nF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
SP40P18NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description

Product Overview

The SP40P18NJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance (18m TYP at -10V, 25m TYP at -4.5V), and 100% Single Pulse avalanche energy testing. This MOSFET is designed for applications such as DC-DC Converters and Power Management.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40P18NJ
  • Device Code: 40P18
  • Package: PDFN3X3-8L
  • Material: Silicon

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -40 V
RDS(on) @-10V 18 m
RDS(on) @-4.5V 25 m
ID -20 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID -20 A
Continuous Drain Current (Tc=100C) ID -13 A
Pulse Drain Current Tested IDM -80 A
Single Pulse Avalanche Energy EAS 90 mJ
Power Dissipation (Tc=25C) PD 35 W
Thermal Resistance Junction-to-Case RJC 3.57 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -40 - V
Drain-Source Leakage Current IDSS VDS=-32V , VGS=0V , TJ=25 - - -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.1 -1.7 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-5A - 18 26 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-5A - 25 35 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-20V , VGS=0V , f=1MHz - 1750 - pF
Output Capacitance Coss - 215 - pF
Reverse Transfer Capacitance Crss - 180 - pF
Total Gate Charge Qg VDS=-25V , VGS=-10V , ID=-25A - 24 - nC
Gate-Source Charge Qgs - 3.5 -
Gate-Drain Charge Qgd - 6 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-25V,VGS=-10V,RG=6, ID=-25A - 9 - nS
Rise Time Tr - 8 -
Turn-Off Delay Time Td(off) - 28 -
Fall Time Tf - 10 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 - - -1.2 V
Maximum Body-Diode Continuous Current IS - - -20 A
Reverse recover time Trr IS=-10A, di/dt=-100A/us, Tj=25 - 24 - nS
Reverse recovery charge Qrr - 12 - nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 - 0.850 0.026 - 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 - 3.100 0.114 - 0.122
D1 2.300 - 2.600 0.091 - 0.102
E 2.900 - 3.100 0.114 - 0.122
E1 3.150 - 3.450 0.124 - 0.136
E2 1.535 - 1.935 0.060 - 0.076
b 0.200 - 0.400 0.008 - 0.016
e 0.550 - 0.750 0.022 - 0.030
L 0.300 - 0.500 0.012 - 0.020
L1 0.180 - 0.480 0.007 - 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 - 0.515 0.012 - 0.020
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2504101957_Siliup-SP40P18NJ_C41355197.pdf

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