40V P Channel MOSFET Siliup SP40P18NJ with Low On Resistance and Single Pulse Avalanche Energy Testing
Product Overview
The SP40P18NJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance (18m TYP at -10V, 25m TYP at -4.5V), and 100% Single Pulse avalanche energy testing. This MOSFET is designed for applications such as DC-DC Converters and Power Management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40P18NJ
- Device Code: 40P18
- Package: PDFN3X3-8L
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |||
| RDS(on) | @-10V | 18 | m | |||
| RDS(on) | @-4.5V | 25 | m | |||
| ID | -20 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -20 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -13 | A | |||
| Pulse Drain Current Tested | IDM | -80 | A | |||
| Single Pulse Avalanche Energy | EAS | 90 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 35 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.57 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.1 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | - | 18 | 26 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-5A | - | 25 | 35 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | - | 1750 | - | pF |
| Output Capacitance | Coss | - | 215 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | pF | |
| Total Gate Charge | Qg | VDS=-25V , VGS=-10V , ID=-25A | - | 24 | - | nC |
| Gate-Source Charge | Qgs | - | 3.5 | - | ||
| Gate-Drain Charge | Qgd | - | 6 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-25V,VGS=-10V,RG=6, ID=-25A | - | 9 | - | nS |
| Rise Time | Tr | - | 8 | - | ||
| Turn-Off Delay Time | Td(off) | - | 28 | - | ||
| Fall Time | Tf | - | 10 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -20 | A | |
| Reverse recover time | Trr | IS=-10A, di/dt=-100A/us, Tj=25 | - | 24 | - | nS |
| Reverse recovery charge | Qrr | - | 12 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
2504101957_Siliup-SP40P18NJ_C41355197.pdf
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