Complementary Power MOSFET Load Switch Shenzhen ruichips Semicon RU40C40L4 N Channel P Channel 40V 40A
Key Attributes
Model Number:
RU40C40L4
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ@4.5V,16A
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
135pF@20V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
2.27nF@20V
Pd - Power Dissipation:
73W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
RU40C40L4
Package:
TO-252-4L
Product Description
Product Overview
The RU40C40L4 is a complementary advanced Power MOSFET featuring N-Channel (40V/40A, RDS(ON)=13m Typ. @ VGS=10V) and P-Channel (-40V/-40A, RDS(ON)=16m Typ. @ VGS=-10V) configurations. It offers fast switching speed, low gate charge, and ESD protection, making it suitable for load switch applications. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: Ruichips Semiconductor
- Origin: Shenzhen City
- Certifications: RoHS Compliant
Technical Specifications
| Model | Channel Type | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS | Application |
| RU40C40L4 | N-Channel | 40 | 40 | 13 @ 10V, 16 @ 4.5V | Load Switch |
| RU40C40L4 | P-Channel | -40 | -40 | 16 @ -10V, 25 @ -4.5V | Load Switch |
| Parameter | Test Condition | N-Channel Typ. (Unit) | P-Channel Typ. (Unit) |
| BVDSS | VGS=0V, IDS=250A (N) / IDS=-250A (P) | 40 (V) | -40 (V) |
| IDSS | VDS=40V, VGS=0V (N) / VDS=-40V, VGS=0V (P) | 1 (A) | -1 (A) |
| VGS(th) | VDS=VGS, IDS=250A (N) / IDS=-250A (P) | 2.5 (V) | -2.5 (V) |
| IGSS | VGS=20V, VDS=0V | 1 (A) | 10 (A) |
| RDS(ON) | VGS=10V, IDS=20A (N) / VGS=-10V, IDS=-20A (P) | 13 (m) | 16 (m) |
| RDS(ON) | VGS=4.5V, IDS=16A (N) / VGS=-4.5V, IDS=-16A (P) | 16 (m) | 25 (m) |
| VSD | ISD=20A (N) / ISD=-20A (P), VGS=0V | 1.2 (V) | -1.3 (V) |
| trr | ISD=20A, dlSD/dt=100A/s (N) / ISD=-20A, dlSD/dt=100A/s (P) | 15 (ns) | 36 (ns) |
| Qrr | 9 (nC) | 26 (nC) | |
| RG | 1.2 () | 1.5 () | |
| Ciss | VGS=0V,VDS=20V(N)/VDS=-20V(P), Frequency=1.0MHz | 740 (pF) | 2270 (pF) |
| Coss | 190 (pF) | 245 (pF) | |
| Crss | 75 (pF) | 135 (pF) | |
| td(ON) | VDD=20V, IDS=20A, VGEN=10V, RG=4.7 (N) / VDD=-20V, IDS=-20A, VGEN=-10V, RG=4.7 (P) | 6 (ns) | 15 (ns) |
| tr | 11 (ns) | 28 (ns) | |
| td(OFF) | 17 (ns) | 37 (ns) | |
| tf | 5 (ns) | 16 (ns) | |
| Qg | VDS=32V, VGS=10V, IDS=20A (N) / VDS=-32V, VGS=-10V, IDS=-20A (P) | 16 (nC) | 42 (nC) |
| Qgs | 3.5 (nC) | 9 (nC) | |
| Qgd | 5 (nC) | 14 (nC) |
| Symbol | Parameter | N-Channel Unit | P-Channel Unit |
| VDSS | Drain-Source Voltage | 40 V | -40 V |
| VGSS | Gate-Source Voltage | 20 V | 20 V |
| TJ | Maximum Junction Temperature | 175 C | 175 C |
| TSTG | Storage Temperature Range | -55 to 175 C | -55 to 175 C |
| IS | Diode Continuous Forward Current (TA=25C) | 40 A | -40 A |
| IDP | 300s Pulse Drain Current (Tested TC=25C) | 160 A | -160 A |
| ID | Continuous Drain Current (VGS=10V, TC=25C) | 40 A | -40 A |
| ID | Continuous Drain Current (VGS=10V, TC=100C) | 25 A | -25 A |
| PD | Maximum Power Dissipation (TC=25C) | 73 W | 67 W |
| PD | Maximum Power Dissipation (TC=100C) | 37 W | 34 W |
| RqJC | Thermal Resistance-Junction to Case | 2.05 C/W | 2.25 C/W |
| RqJA | Thermal Resistance-Junction to Ambient | 100 C/W | 100 C/W |
| EAS | Avalanche Energy, Single Pulsed | 42 mJ | 42 mJ |
2410121843_Shenzhen-ruichips-Semicon-RU40C40L4_C2803362.pdf
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