P Channel MOSFET Shenzhen ruichips Semicon RU30P3B with super high density cell design and RoHS compliance
Key Attributes
Model Number:
RU30P3B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-
RDS(on):
130mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 P-Channel
Input Capacitance(Ciss):
550pF
Output Capacitance(Coss):
95pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
RU30P3B
Package:
SOT-23
Product Description
Product Overview
The RU30P3B is a P-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for efficient power management. It features a -30V drain-source voltage and a continuous drain current of -3.5A, with low on-resistance of 50m (Typ.) at VGS=-10V and 80m (Typ.) at VGS=-4.5V. This MOSFET boasts a super high-density cell design, offering reliability and ruggedness. It is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: Ruichips
- Origin: CHINA
- Certifications: RoHS Compliant
- Package: SOT23
- Device Marking: RU30P3B
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | VDSS | -30 | V | |||
| VGSS | 20 | V | ||||
| TJ | 150 | C | ||||
| Common Ratings | ID | TA=25C | -3.5 | A | ||
| PD | TA=25C, Mounted on Large Heat Sink | 1 | W | |||
| Electrical Characteristics | BVDSS | VGS=0V, IDS=-250A | -30 | V | ||
| RDS(ON) | VGS=-10V, IDS=-3.5A | 50 | m | |||
| Diode Characteristics | VSD | ISD=-1A, VGS=0V | -1.2 | V | ||
| Dynamic Characteristics | Ciss | VGS=0V, VDS=0V, F=1MHz | 550 | pF | ||
| Coss | VGS=0V, VDS=-15V, Frequency=1.0MHz | 95 | pF | |||
| Crss | VGS=0V, VDS=-15V, Frequency=1.0MHz | 50 | pF | |||
| Gate Charge Characteristics | Qg | VDS=-24V, IDS=-3.5A, VGS=-10V | 12 | nC | ||
| Qgs | VDS=-24V, IDS=-3.5A, VGS=-10V | 1.3 | nC | |||
| Qgd | VDS=-24V, IDS=-3.5A, VGS=-10V | 2.5 | nC | |||
| td(ON) | VDD=-15V, IDS=-3.5A, VGEN=-10V,RG=6 | 5 | ns | |||
| Thermal Resistance | RJA | When mounted on 1 inch square copper board, t10sec | 125 | C/W |
2410122015_Shenzhen-ruichips-Semicon-RU30P3B_C181988.pdf
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