Built-in Bias Resistor NPN Digital Transistor ROHM DTC143TU3T106 Suitable for Inverter Interface and Driver Circuits
Key Attributes
Model Number:
DTC143TU3T106
Product Custom Attributes
DC Current Gain:
600@1mA,5V
Current - Collector(Ic):
100mA
Number:
-
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC143TU3T106
Package:
SOT-323
Product Description
Product Overview
The DTC143T series is a line of NPN digital transistors featuring built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors. These transistors are ideal for inverter, interface, and driver applications, offering easy operation by only requiring the setting of on/off conditions. Complementary PNP types are also available in the DTA143T series.
Product Attributes
- Brand: ROHM
- Type: NPN Digital Transistor (Bias Resistor Built-in Transistor)
- Complementary PNP Types: DTA143T series
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking | VCEO (V) | IC (mA) | R1 (k) | Power Dissipation (mW) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| DTC143TM | SOT-723 | 1212 | T2L | 180 | 8 | 8000 | 03 | 50 | 100 | 4.7 | 150*1 |
| DTC143TEB | SOT-416FL | 1616 | TL | 180 | 8 | 3000 | 03 | 50 | 100 | 4.7 | 150 |
| DTC143TE | SOT-416 | 1616 | TL | 180 | 8 | 3000 | 03 | 50 | 100 | 4.7 | 150 |
| DTC143TUB | SOT-323FL | 2021 | TL | 180 | 8 | 3000 | 03 | 50 | 100 | 4.7 | 200 |
| DTC143TU3 | SOT-323 | 2021 | T106 | 180 | 8 | 3000 | 03 | 50 | 100 | 4.7 | 200 |
| DTC143TKA | SOT-346 | 2928 | T146 | 180 | 8 | 3000 | 03 | 50 | 100 | 4.7 | 200 |
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 50 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | |||
| Emitter-base voltage | VEBO | 5 | V | |||
| Collector current | IC | 100 | mA | |||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 500 | nA |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = 5mA, IB = 0.25mA | - | - | 300 | mV |
| DC current gain | hFE | VCE = 5V, IC = 1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | 3.29 | 6.11 | k | |
| Transition frequency | fT*2 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
2211141030_ROHM-DTC143TU3T106_C5252698.pdf
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