rugged P Channel MOSFET Shenzhen ruichips Semicon RU20P7C optimized for load switching applications
Key Attributes
Model Number:
RU20P7C
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-40℃~+150℃
RDS(on):
38mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Output Capacitance(Coss):
135pF
Input Capacitance(Ciss):
640pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
RU20P7C
Package:
SOT-23
Product Description
Product Description
The RU20P7C is a P-Channel Advanced Power MOSFET designed for efficient power management applications. It features low on-resistance, a super high-density cell design, and is reliable and rugged. This device is suitable for load switching, power management, and battery protection circuits. Available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: Ruichips
- Origin: Shenzhen, China
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
- Package: SOT23-3
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, IDS=-250A |
| Gate Threshold Voltage | VGS(th) | -0.4 to -1.1 | V | VDS=VGS, IDS=-250A |
| Gate Leakage Current | IGSS | ±100 | nA | VGS=±16V, VDS=0V |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-20V, VGS=0V, TJ=125°C |
| Drain-Source On-state Resistance | RDS(ON) | 20 (Typ.) | mΩ | VGS=-4.5V, IDS=-5A |
| Drain-Source On-state Resistance | RDS(ON) | 30 (Typ.) | mΩ | VGS=-2.5V, IDS=-4A |
| Diode Forward Voltage | VSD | -1.2 | V | ISD=-5A, VGS=0V |
| Reverse Recovery Time | trr | 17 | ns | ISD=-1A, dlSD/dt=100A/µs |
| Reverse Recovery Charge | Qrr | 23 | nC | ISD=-1A, dlSD/dt=100A/µs |
| Input Capacitance | Ciss | 640 (Typ.) | pF | VGS=0V,VDS=0V,F=1MHz |
| Output Capacitance | Coss | 135 (Typ.) | pF | VGS=0V, VDS=-10V, Frequency=1.0MHz |
| Reverse Transfer Capacitance | Crss | 65 (Typ.) | pF | VGS=0V, VDS=-10V, Frequency=1.0MHz |
| Turn-on Delay Time | td(ON) | 9 (Typ.) | ns | VDD=-10V, RL=3.8Ω, IDS=-5A, VGEN=-4.5V, RG=6Ω |
| Turn-on Rise Time | tr | 16 (Typ.) | ns | VDD=-10V, RL=3.8Ω, IDS=-5A, VGEN=-4.5V, RG=6Ω |
| Turn-off Delay Time | td(OFF) | 45 (Typ.) | ns | VDD=-10V, RL=3.8Ω, IDS=-5A, VGEN=-4.5V, RG=6Ω |
| Turn-off Fall Time | tf | 21 (Typ.) | ns | VDD=-10V, RL=3.8Ω, IDS=-5A, VGEN=-4.5V, RG=6Ω |
| Total Gate Charge | Qg | 10 (Typ.) | nC | VDS=-16V, VGS=-10V, IDS=-5A |
| Gate-Source Charge | Qgs | 2 (Typ.) | nC | VDS=-16V, VGS=-10V, IDS=-5A |
| Gate-Drain Charge | Qgd | 3 (Typ.) | nC | VDS=-16V, VGS=-10V, IDS=-5A |
| Continuous Drain Current | ID | -5 | A | TA=25°C, VGS=-4.5V |
| Continuous Drain Current | ID | -4 | A | TA=70°C, VGS=-4.5V |
| Pulse Drain Current | IDP | -20 | A | TA=25°C |
| Maximum Power Dissipation | PD | 1.3 | W | Mounted on Large Heat Sink, TA=25°C |
| Maximum Power Dissipation | PD | 0.8 | W | Mounted on Large Heat Sink, TA=70°C |
| Thermal Resistance-Junction to Case | RθJC | 100 | °C/W | Mounted on Large Heat Sink |
| Thermal Resistance-Junction to Ambient | RθJA | 300µs Pulse | °C/W | When mounted on 1 inch square copper board |
| Drain-Source Voltage | VDSS | -20 | V | Common Ratings |
| Gate-Source Voltage | VGSS | ±16 | V | Absolute Maximum Ratings |
| Maximum Junction Temperature | TJ | 150 | °C | Absolute Maximum Ratings |
| Storage Temperature Range | TSTG | -55 to 150 | °C | Absolute Maximum Ratings |
2410122015_Shenzhen-ruichips-Semicon-RU20P7C_C181984.pdf
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