Shenzhen ruichips Semicon RU6888R N Channel MOSFET with Full Avalanche Rating and Low On Resistance
Key Attributes
Model Number:
RU6888R
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
88A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.9nF
Output Capacitance(Coss):
340pF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
RU6888R
Package:
TO-220
Product Description
Product Overview
The RU6888 is an N-Channel Advanced Power MOSFET designed for high-performance switching applications. It features ultra-low on-resistance, exceptional dv/dt capability, and fast switching with full avalanche rating. This MOSFET is 100% avalanche tested and operates at temperatures up to 175C, making it suitable for demanding power systems.
Product Attributes
- Brand: Ruichips Semiconductor
- Model: RU6888
- Material: Lead Free and Green Available
- Certifications: Not specified
- Origin: CHINA
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition | Min. | Typ. | Max. |
| Common Ratings | |||||||
| Drain-Source Voltage | VDSS | 68 | V | TA=25C Unless Otherwise Noted | |||
| Gate-Source Voltage | VGSS | 25 | V | ||||
| Maximum Junction Temperature | TJ | 175 | C | ||||
| Storage Temperature Range | TSTG | -55 to 175 | C | ||||
| Diode Continuous Forward Current | IS | 88 | A | TC=25C Mounted on Large Heat Sink | |||
| 300s Pulse Drain Current | IDP | 320 | A | Tested TC=25C | |||
| Continuous Drain Current | ID | 88 | A | TC=25C | |||
| Continuous Drain Current | ID | 65 | A | TC=100C | |||
| Maximum Power Dissipation | PD | 130 | W | TC=25C | |||
| Maximum Power Dissipation | PD | 70 | W | TC=100C | |||
| Thermal Resistance-Junction to Case | RJC | 0.6 | C/W | ||||
| Avalanche Energy, Single Pulsed | EAS | 400 | mJ | ||||
| Static Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | 68 | V | VGS=0V, IDS=250A | 68 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS= 68V, VGS=0V | |||
| Zero Gate Voltage Drain Current | IDSS | 30 | A | TJ=85C | |||
| Gate Threshold Voltage | VGS(th) | 2 | V | VDS=VGS, IDS=250A | 2 | 3 | 4 |
| Gate Leakage Current | IGSS | 100 | nA | VGS=25V, VDS=0V | |||
| Drain-Source On-state Resistance | RDS(ON) | 6 | m | VGS= 10V, IDS=35A | 6 | 8 | |
| Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | 0.84 | V | ISD=20 A, VGS=0V | |||
| Reverse Recovery Time | trr | 49 | ns | ISD=40A, dlSD/dt=100A/s | |||
| Reverse Recovery Charge | Qrr | 93 | nC | ISD=40A, dlSD/dt=100A/s | |||
| Dynamic Characteristics | |||||||
| Gate Resistance | RG | 1.4 | VGS=0V,VDS=0V,F=1MHz | ||||
| Input Capacitance | Ciss | 2900 | pF | VGS=0V, VDS= 30V, Frequency=1.0MHz | |||
| Output Capacitance | Coss | 340 | pF | VGS=0V, VDS= 30V, Frequency=1.0MHz | |||
| Reverse Transfer Capacitance | Crss | 200 | pF | VGS=0V, VDS= 30V, Frequency=1.0MHz | |||
| Turn-on Delay Time | td(ON) | 13 | ns | VDD=30V, RL=30, IDS= 1A, VGEN= 10V, RG=8 | |||
| Turn-on Rise Time | tr | 15 | ns | VDD=30V, RL=30, IDS= 1A, VGEN= 10V, RG=8 | |||
| Turn-off Delay Time | td(OFF) | 29 | ns | VDD=30V, RL=30, IDS= 1A, VGEN= 10V, RG=8 | |||
| Turn-off Fall Time | tf | 55 | ns | VDD=30V, RL=30, IDS= 1A, VGEN= 10V, RG=8 | |||
| Gate Charge Characteristics | |||||||
| Total Gate Charge | Qg | 65 | nC | VDS=30V, VGS= 10V, IDS=40A | |||
| Gate-Source Charge | Qgs | 12 | nC | VDS=30V, VGS= 10V, IDS=40A | |||
| Gate-Drain Charge | Qgd | 21 | nC | VDS=30V, VGS= 10V, IDS=40A | |||
Applications
Switching Application Systems, Inverter Systems.
2410122015_Shenzhen-ruichips-Semicon-RU6888R_C180949.pdf
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