Siliup SP6036CP8 60V complementary MOSFET in SOP8L package designed for load switching and battery protection

Key Attributes
Model Number: SP6036CP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A;4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@10V;68mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA;1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
46pF;58pF
Number:
-
Input Capacitance(Ciss):
1.165nF;1.09nF
Output Capacitance(Coss):
53pF;77pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
22nC@10V;25.7nC@10V
Mfr. Part #:
SP6036CP8
Package:
SOP-8
Product Description

Product Overview

The SP6036CP8 is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. designed for high power and current handling capabilities. It features a lead-free product acquisition and is available in a surface mount SOP-8L package. This device is 100% tested for single pulse avalanche energy. Key applications include battery protection, load switching, and power management.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: Complementary MOSFET
  • Packaging: SOP-8L
  • Certifications: Lead free product acquired
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Value (Typ.) P-Channel Conditions P-Channel Value (Typ.) Unit
Drain-Source Voltage VDS 60V -60V V
Absolute Maximum Rating
Gate-Source Voltage VGS 20V 20V V
Absolute Maximum Rating
Continuous Drain Current ID 5A -4A A
Absolute Maximum Rating
Pulsed Drain Current IDM 20A -16A A
Absolute Maximum Rating
Single Pulse Avalanche Energy EAS 18mJ 36mJ mJ
Absolute Maximum Rating
Power Dissipation PD 2W 2W W
Absolute Maximum Rating
Thermal Resistance Junction-to-Ambient RJA 62.5 /W 62.5 /W /W
Absolute Maximum Rating
Storage Temperature Range TSTG -55 to 150 -55 to 150
Absolute Maximum Rating
Operating Junction Temperature Range TJ -55 to 150 -55 to 150
Absolute Maximum Rating
Device Code 6036
Model SP6036CP8
Package SOP-8L
Unit/Tape 4000
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60V VGS=0V , ID=-250uA -60V V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 1 uA VDS=-48V , VGS=0V , TJ=25 -1 uA uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA VGS=20V , VDS=0V 100 nA nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 - 2.5 V VGS=VDS , ID =-250uA -1.0 - -2.5 V V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=4.5A 35 - 50 m VGS=-10V , ID=-3.5A 68 - 85 m m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=4A 45 - 65 m VGS=-4.5V , ID=-2.5A 75 - 100 m m
Input Capacitance Ciss VDS=30V , VGS=0V , f=1MHz 1165 pF VDS=-30V , VGS=0V , f=1MHz 1090 pF pF
Output Capacitance Coss 53 pF 77 pF pF
Reverse Transfer Capacitance Crss 46 pF 58 pF pF
Total Gate Charge Qg VDS=30V , VGS=10V , ID=5A 22 nC VDS=-30V , VGS=-10V , ID=-4A 25.7 nC nC
Gate-Source Charge Qgs 2.5 nC 3 nC nC
Gate-Drain Charge Qg d 3.4 nC 3.5 nC nC
Turn-On Delay Time Td(on) VDD=30V, VGS=10V , RG=3, ID=10A 4.4 nS VDD=-30V VGS=-10V , RG=3, ID=-5A 9 nS nS
Rise Time Tr 3.4 nS 11 nS nS
Turn-Off Delay Time Td(off) 16 nS 25 nS nS
Fall Time Tf 2 nS 12 nS nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 V VGS=0V , IS=-1A , TJ=25 -1.2 V V
Maximum Body-Diode Continuous Current IS 5 A -4 A A
Reverse Recovery Time Trr IS=5A, di/dt=100A/us, TJ=25 23 nS IS=-4A, di/dt=-100A/us, Tj=25 25 nS nS
Reverse Recovery Charge Qrr 9 nC 30 nC nC
SOP-8L Package Dimensions Symbol Dimensions In Millimeters (Min.) Dimensions In Millimeters (Max.) Unit
A 1.35 1.75 mm
A1 0.10 0.25 mm
A2 1.35 1.55 mm
b 0.33 0.51 mm
c 0.17 0.25 mm
D 4.80 5.00 mm
e 1.27 REF. mm
E 5.80 6.20 mm
E1 3.80 4.00 mm
L 0.40 1.27 mm
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2504101957_Siliup-SP6036CP8_C22385404.pdf

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