Energy 60V P Channel MOSFET Siliup SP60P11TH with Fast Switching and Low Gate Charge Characteristics
Key Attributes
Model Number:
SP60P11TH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
11mΩ@10V;14mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
364pF
Number:
1 P-Channel
Output Capacitance(Coss):
489pF
Input Capacitance(Ciss):
7.7nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
85.5nC@4.5V
Mfr. Part #:
SP60P11TH
Package:
TO-252-2L
Product Description
Product Overview
The SP60P11H is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as DC-DC converters and load switching. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P11H
- Device Code: 60P11
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-10V | 11 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @-4.5V | 14 | m | ||
| Continuous Drain Current | ID | -80 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | -80 | A | ||
| Continuous Drain Current | ID | (TC=100) | -53 | A | ||
| Pulsed Drain Current | IDM | -320 | A | |||
| Single Pulse Avalanche Energy | EAS | 506 | mJ | |||
| Power Dissipation | PD | (TC=25) | 150 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.83 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 11 | 15 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-20A | 14 | 18.5 | m | |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 7700 | pF | ||
| Output Capacitance | Coss | 489 | pF | |||
| Reverse Transfer Capacitance | Crss | 364 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-1A | 85.5 | nC | ||
| Gate-Source Charge | Qgs | 12.1 | nC | |||
| Gate-Drain Charge | Qg | 23.2 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3.3, ID=-1A | 9.8 | nS | ||
| Rise Time | Tr | 6.1 | nS | |||
| Turn-Off Delay Time | Td(off) | 44 | nS | |||
| Fall Time | Tf | 12.7 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -80 | A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 50 | nS | ||
| Reverse Recovery Charge | Qrr | 69 | nC | |||
2504101957_Siliup-SP60P11TH_C41355208.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
