High frequency power switching mosfet with low gate charge Siliup SP30P11P8 p channel 30 volt device
Key Attributes
Model Number:
SP30P11P8
Product Custom Attributes
Pd - Power Dissipation:
3.2W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
-
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
1.915nF
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
SP30P11P8
Package:
SOP-8L
Product Description
Product Overview
The SP30P11P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P11P8
- Device Code: 30P11
- Package Type: SOP-8L
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -30 | V | ||||
| RDS(on)TYP | @-10V | 11 | m | |||
| @-4.5V | 17 | m | ||||
| ID | -12 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25) | -12 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | -48 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25) | 25 | mJ | ||
| Power Dissipation | PD | (Ta=25) | 2 | W | ||
| Junction-to-Ambient Thermal Resistance | RJA | (Ta=25) | 62.5 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V, VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-10A | 11 | 14 | m | |
| VGS=-4.5V, ID=-8A | 17 | 23 | m | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 1915 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | 300 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | 210 | pF | ||
| Total Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-5A | 25 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V, VGS=-10V, ID=-5A | 5 | nC | ||
| Gate-Drain Charge | Qg d | VDS=-15V, VGS=-10V, ID=-5A | 6 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V, RG=3, ID=-10A | 9 | nS | ||
| Rise Time | Tr | VDD=-15V, VGS=-10V, RG=3, ID=-10A | 11 | nS | ||
| Turn-Off Delay Time | Td(off) | VDD=-15V, VGS=-10V, RG=3, ID=-10A | 44 | nS | ||
| Fall Time | Tf | VDD=-15V, VGS=-10V, RG=3, ID=-10A | 21 | nS | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -12 | A | |||
| Reverse recovery time | Trr | IS=-10A, di/dt=100A/us, Tj=25 | 15 | nS | ||
| Reverse recovery charge | Qrr | IS=-10A, di/dt=100A/us, Tj=25 | 5 | nC | ||
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP30P11P8_C41355019.pdf
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