RU8590S R N Channel Power MOSFET by Shenzhen ruichips Semicon suitable for demanding power switching
Key Attributes
Model Number:
RU8590S-R
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
275pF
Number:
1 N-channel
Output Capacitance(Coss):
480pF
Input Capacitance(Ciss):
4.35nF
Pd - Power Dissipation:
188W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
RU8590S-R
Package:
TO-263
Product Description
RU8590S N-Channel Advanced Power MOSFET
The RU8590S is an N-Channel Advanced Power MOSFET designed for high-speed power switching applications. It offers ultra-low on-resistance, fast switching characteristics, and is fully avalanche rated, making it suitable for demanding applications. This device operates at an extended temperature range of 175C and is available in Lead Free and Green Devices (RoHS Compliant) options.
Product Attributes
- Brand: Ruichips Semiconductor Co., Ltd
- Product Series: RU8590S
- Package Type: TO263
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 85 | V | |||
| Gate-Source Voltage | VGSS | ±25 | V | |||
| Maximum Junction Temperature | TJ | 175 | °C | |||
| Storage Temperature Range | TSTG | -55 | 175 | °C | ||
| Diode Continuous Forward Current | IS | TC=25°C | 90 | A | ||
| Pulse Drain Current | IDP | TC=25°C | 360 | A | ||
| Tested Continuous Drain Current(VGS=10V) | ID | TC=25°C | 90 | A | ||
| Tested Continuous Drain Current(VGS=10V) | ID | TC=100°C | 64 | A | ||
| Maximum Power Dissipation | PD | Mounted on Large Heat Sink, TC=25°C | 188 | W | ||
| Maximum Power Dissipation | PD | Mounted on Large Heat Sink, TC=100°C | 94 | W | ||
| Avalanche Energy, Single Pulsed | EAS | 306 | mJ | |||
| Thermal Resistance-Junction to Case | RθJC | 0.8 | °C/W | |||
| Thermal Resistance-Junction to Ambient | RθJA | 62.5 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250µA | 85 | 90 | V | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250µA | 2 | 4 | V | |
| Gate Leakage Current | IGSS | VGS=±25V, VDS=0V | ±100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, IDS=45A | 5.8 | 8 | mΩ | |
| Zero Gate Voltage Drain Current | IDSS | VDS=85V, VGS=0V, TJ=125°C | 30 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=85V, VGS=0V | 1 | µA | ||
| Diode Forward Voltage | VSD | ISD=45A, VGS=0V | 1.2 | V | ||
| Reverse Recovery Time | trr | ISD=45A, dISD/dt=100A/µs | 29 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=45A, dISD/dt=100A/µs | 45 | nC | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=0V, F=1MHz | 4350 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=40V, F=1.0MHz | 480 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=40V, F=1.0MHz | 275 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=40V, IDS=45A, VGEN=10V, RG=0.8Ω | 25 | ns | ||
| Turn-on Rise Time | tr | VDD=40V, IDS=45A, VGEN=10V, RG=0.8Ω | 49 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=40V, IDS=45A, VGEN=10V, RG=0.8Ω | 121 | ns | ||
| Turn-off Fall Time | tf | VDD=40V, IDS=45A, VGEN=10V, RG=0.8Ω | 17 | ns | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS=68V, VGS=10V, IDS=45A | 48 | nC | ||
| Gate-Source Charge | Qgs | VDS=68V, VGS=10V, IDS=45A | 13 | nC | ||
| Gate-Drain Charge | Qgd | VDS=68V, VGS=10V, IDS=45A | 16 | nC | ||
| Gate Resistance | RG | 1.3 | Ω | |||
2410122015_Shenzhen-ruichips-Semicon-RU8590S-R_C2803371.pdf
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