Durable 40 Volt N Channel MOSFET Siliup SP40N02ATD with Low Gate Charge and Fast Switching Capability
Key Attributes
Model Number:
SP40N02ATD
Product Custom Attributes
Pd - Power Dissipation:
246W
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.6mΩ@10V;2.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
760pF
Number:
1 N-channel
Output Capacitance(Coss):
1.94nF
Input Capacitance(Ciss):
10.8nF
Gate Charge(Qg):
147nC@10V
Mfr. Part #:
SP40N02ATD
Package:
TO-263
Product Description
Product Overview
The SP40N02ATD is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low Gate Charge, and low RDS(on), enabled by advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC converters, motor control, and portable equipment.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40N02A
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40V | V | ||||
| RDS(on) TYP | @10V | 1.6m | ||||
| RDS(on) TYP | @4.5V | 2.6m | ||||
| ID | 180A | |||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 180 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 120 | A | |||
| Pulse Drain Current Tested | IDM | 720 | A | |||
| Single pulsed avalanche energy1 | EAS | 841 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 246 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.51 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - | 1.6 | 2 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =10A | - | 2.6 | 3.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 10800 | - | pF |
| Output Capacitance | Coss | - | 1940 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 760 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 147 | - | nC |
| Gate-Source Charge | Qgs | - | 50 | - | ||
| Gate-Drain Charge | Qgd | - | 31 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=20V, VGS=10V , RG=2.7, ID=30A | - | 26 | - | nS |
| Rise Time | tr | - | 30 | - | ||
| Turn-Off Delay Time | td(off) | - | 59 | - | nS | |
| Fall Time | tf | - | 19 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 180 | A | |
| Reverse recover time | trr | IS=30A, di/dt=100A/us, Tj=25 | - | 23 | - | nS |
| Reverse recovery charge | Qrr | - | 29 | - | nC | |
| Package Information (TO-263) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.470 | 4.670 | 0.176 | 0.184 | ||
| A1 | 0.000 | 0.150 | 0.000 | 0.006 | ||
| B | 1.120 | 1.420 | 0.044 | 0.056 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.310 | 0.530 | 0.012 | 0.021 | ||
| c1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| D | 10.010 | 10.310 | 0.394 | 0.406 | ||
| E | 8.500 | 8.900 | 0.335 | 0.350 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| L | 14.940 | 15.500 | 0.588 | 0.610 | ||
| L1 | 4.950 | 5.450 | 0.195 | 0.215 | ||
| L2 | 2.340 | 2.740 | 0.092 | 0.108 | ||
| L3 | 1.300 | 1.700 | 0.051 | 0.067 | ||
| 0 | 8 | 0 | 8 | |||
| V | 5.600 REF. | 0.220 REF. | ||||
Note: 1 The EAS Test condition is VDD=20V, VGS =10V, L = 0.5mH, Rg=25.
2504101957_Siliup-SP40N02ATD_C41354883.pdf
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