30 Volt N Channel MOSFET Siliup SP30N03TH with Low RDSon and Single Pulse Avalanche Energy Testing
Key Attributes
Model Number:
SP30N03TH
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
227pF
Number:
1 N-channel
Output Capacitance(Coss):
288pF
Input Capacitance(Ciss):
2.25nF
Pd - Power Dissipation:
68W
Gate Charge(Qg):
49nC@10V
Mfr. Part #:
SP30N03TH
Package:
TO-252
Product Description
Product Overview
The SP30N03TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on) (3.2m@10V, 4.8m@5V). It is ideal for DC-DC converters and features 100% single pulse avalanche energy testing. The device is housed in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N03TH
- Channel Type: N-Channel
- Package: TO-252
- Device Code: 30N03
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 3.2 | m | ||
| RDS(on)TYP | RDS(on) | @5V | 4.8 | m | ||
| ID | ID | 100 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (TC=25) | 100 | A | ||
| Continuous Drain Current | ID | (TC=100) | 66 | A | ||
| Pulsed Drain Current | IDM | 400 | A | |||
| Single Pulse Avalanche Energy | EAS | 240 | mJ | |||
| Power Dissipation | PD | (TC=25) | 68 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.84 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 3.2 | 4 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=15A | - | 4.8 | 7 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 2250 | - | pF |
| Output Capacitance | Coss | - | 288 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 227 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=10V , ID=45A | - | 49 | - | nC |
| Gate-Source Charge | Qgs | - | 8.2 | - | ||
| Gate-Drain Charge | Qg d | - | 16.4 | - | ||
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V , RG=3, ID=20A | - | 12 | - | nS |
| Rise Time | Tr | - | 15 | - | ||
| Turn-Off Delay Time | Td(off) | - | 40 | - | ||
| Fall Time | Tf | - | 14 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 100 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 13 | - | nS |
| Reverse Recovery Charge | Qrr | - | 4 | - | nC | |
Package Information (TO-252)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
2410311049_Siliup-SP30N03TH_C42372341.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
