N Channel MOSFET Siliup SP60N15HTH Featuring Low Rds on and Fast Switching in TO 252 Package
Key Attributes
Model Number:
SP60N15HTH
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 N-channel
Output Capacitance(Coss):
150pF
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
2.05nF
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
SP60N15HTH
Package:
TO-252
Product Description
Product Overview
The SP60N15HTH is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rds(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching. The device is supplied in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N15H
- Package: TO-252
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| RDS(on) Typ. | RDS(on)TYP | @10V | 15 | m | ||
| Continuous Drain Current | ID | 45 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 45 | A | ||
| Continuous Drain Current | ID | (TC=100) | 53 | A | ||
| Pulsed Drain Current | IDM | 180 | A | |||
| Single Pulse Avalanche Energy | EAS | 121 | mJ | |||
| Power Dissipation | PD | (TC=25) | 40 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.1 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=15A | - | 15 | 19 | m |
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 2050 | - | pF |
| Output Capacitance | Coss | - | 150 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 120 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=20A | - | 38 | - | nC |
| Gate-Source Charge | Qgs | - | 5.6 | - | nC | |
| Gate-Drain Charge | Qg d | - | 10.4 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V , RG=3, ID=20A | - | 7.8 | - | nS |
| Rise Time | Tr | - | 47 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 29 | - | nS | |
| Fall Time | Tf | - | 31 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 45 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 20 | - | nS |
| Reverse Recovery Charge | Qrr | - | 83 | - | nC | |
| TO-252 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
2504101957_Siliup-SP60N15HTH_C41354979.pdf
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