20V P Channel MOSFET Siliup SP2004KT7 Featuring 2KV ESD Protection Suitable for DC DC Converters
Key Attributes
Model Number:
SP2004KT7
Product Custom Attributes
Pd - Power Dissipation:
150mW
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
700mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
400mΩ@4.5V;550mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
113pF
Gate Charge(Qg):
1.9nC@4.5V
Mfr. Part #:
SP2004KT7
Package:
SOT-723
Product Description
Product Overview
The SP2004KT7 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capability, along with ESD protection up to 2KV. It is designed for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2004KT7
- Device Code: 04K
- Package: SOT-723
- Technology: P-Channel MOSFET
- Voltage Rating: 20V
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |
| RDS(on) Typ. | @-4.5V | 400 | m | |
| ID | -0.7 | A | ||
| RDS(on) Typ. | @-2.5V | 550 | m | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Drain-Source Voltage | VDSS | -20 | V | |
| Gate-Source Voltage | VGSS | 12 | V | |
| Continuous Drain Current | ID | -0.7 | A | |
| Pulse Drain Current | IDM | Tested | -2.8 | A |
| Power Dissipation | PD | 150 | mW | |
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | -1 uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | 10 uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 to -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 400 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-200mA | 550 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS=-16V , VGS=0V , f=1MHz | 113 | pF |
| Output Capacitance | Coss | 15 | pF | |
| Reverse Transfer Capacitance | Crss | 9 | pF | |
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-2A | 1.9 | nC |
| Gate-Source Charge | Qgs | 0.4 | nC | |
| Gate-Drain Charge | Qg | 0.31 | nC | |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=10 , ID=-200mA | 9 | nS |
| Turn-On Rise Time | tr | 5.7 | nS | |
| Turn-Off Delay Time | td(off) | 32.6 | nS | |
| Turn-Off Fall Time | tf | 20.3 | nS | |
| Source-Drain Diode Characteristics | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
| Package Information (SOT-723) | ||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |
| A | 0.430 | 0.500 | ||
| A1 | 0.000 | 0.050 | ||
| b | 0.170 | 0.270 | ||
| b1 | 0.270 | 0.370 | ||
| c | 0.080 | 0.150 | ||
| D | 1.150 | 1.250 | ||
| E | 1.150 | 1.250 | ||
| E1 | 0.750 | 0.850 | ||
| e | 0.800 (TYP.) | |||
| 7 (REF.) | ||||
2504101957_Siliup-SP2004KT7_C41354945.pdf
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