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quality TrenchFET N Channel MOSFET 30V Siliup SP2306T2J Designed for Load Switch Applications in Electronics factory
quality TrenchFET N Channel MOSFET 30V Siliup SP2306T2J Designed for Load Switch Applications in Electronics factory

TrenchFET N Channel MOSFET 30V Siliup SP2306T2J Designed for Load Switch Applications in Electronics

Key Attributes
Model Number: SP2306T2J
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.6A
RDS(on):
65mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Input Capacitance(Ciss):
305pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
4.5nC@5V
Mfr. Part #:
SP2306T2J
Package:
SOT-23
Product Description

Product Overview

The SP2306T2J is a 30V N-Channel MOSFET from Shanghai Siliup Semiconductor Technology Co. Ltd. Featuring TrenchFET technology, it offers low on-resistance at various gate-source voltages (38m typ. at 10V and 45m typ. at 4.5V) and a continuous drain current of 3.6A. This MOSFET is suitable for applications such as DC/DC converters and load switches for portable devices.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Model: SP2306T2J
  • Technology: TrenchFET Power MOSFET
  • Channel Type: N-Channel
  • Package: SOT-23
  • Device Code: S6

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Ta=25) ID 3.6 A
Pulsed Drain Current IDM 14.4 A
Maximum Power Dissipation PD 0.35 W
Thermal Resistance (Junction to Ambient, t5s) RJA 357 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 +150
Electrical Characteristics (TA=25, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 30 V
Zero gate voltage drain current IDSS VDS =30V,VGS = 0V 0.5 A
Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA
Gate threshold voltage VGS(th) VDS =VGS, ID =250A 1 1.5 2 V
Drain-source on-resistance RDS(on) VGS =10V, ID =3.5A 38 47 m
Drain-source on-resistance RDS(on) VGS =4.5V, ID =2.8A 45 65 m
Dynamic Characteristics
Total Gate Charge Qg VDS =15V,VGS =5V,ID =2.5A 3.0 4.5 nC
Total Gate Charge Qgt VDS =15V,VGS =10V,ID =2.5A 6 9
Gate-source charge Qgs 1.6
Gate-drain charge Qgd 0.6
Gate resistance Rg f =1.0MHz 2.5 7.5
Input Capacitance Ciss VDS =15V,VGS =0V,f =1MHz 305 pF
Output Capacitance Coss 65 pF
Reverse Transfer Capacitance Crss 29 pF
Turn-on delay time td(on) VDD=15V, RL=15, ID 1A, VGEN=10V,Rg=6 7 11 ns
Turn-on rise time tr 12 18 ns
Turn-off delay time td(off) 14 25 ns
Turn-off fall time tf 6 10 ns
Source-Drain Diode Characteristics
Body diode voltage VSD IS=1.25A,VGS=0V 0.8 1.2 V

Package Dimensions (SOT-23):

Symbol Dimensions (mm)
A 0.90 - 1.15
A1 0.00 - 0.10
A2 0.90 - 1.05
b 0.30 - 0.50
c 0.08 - 0.15
D 2.80 - 3.00
E 1.20 - 1.40
E1 2.25 - 2.55
e 0.95 REF.
e1 1.80 - 2.00
L 0.55 REF.
L1 0.30 - 0.50
0 - 8

2411212332_Siliup-SP2306T2J_C41355158.pdf

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