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quality High Voltage Silicon Carbide MOSFET SG2M040120JJ with Low On Resistance and Enhanced Switching Speed factory
quality High Voltage Silicon Carbide MOSFET SG2M040120JJ with Low On Resistance and Enhanced Switching Speed factory

High Voltage Silicon Carbide MOSFET SG2M040120JJ with Low On Resistance and Enhanced Switching Speed

Key Attributes
Model Number: SG2M040120JJ
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.5pF
Input Capacitance(Ciss):
1.82nF
Pd - Power Dissipation:
366W
Gate Charge(Qg):
60nC
Mfr. Part #:
SG2M040120JJ
Package:
TO-263-7L
Product Description

Product Overview

The SG2M040120JJ is a 1200V Silicon Carbide (SiC) Power MOSFET from TriQSiCTM, designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and a high blocking voltage with low on-resistance. Key benefits include reduced cooling effort and requirements, improved efficiency, and increased power density. This MOSFET is ideal for applications such as on-board chargers, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.

Product Attributes

  • Brand: TriQSiCTM
  • Manufacturer: (Sichain Semiconductor)
  • Material: Silicon Carbide (SiC)
  • Channel Type: N Channel Enhancement
  • Compliance: Halogen free, RoHS compliant
  • Package Type: TO-263-7L

Technical Specifications

Type VDS IDS (TC = 25) RDS(on), typ (VGS = 18V, ID = 32A, TJ = 25) TJ,max Marking Package
SG2M040120JJ 1200V 75A 35m 175 SG2M040120JJ TO-263-7L
Symbol Parameter Value Unit Test Conditions Note
VDS,max Drain source voltage 1200 V VGS = 0V, ID = 100A
VGS,max Gate source voltage -8 /+22 V Absolute maximum values Note1
VGSop Gate source voltage -4 /+18 V Recommended operational values
ID Continuous drain current 75 A VGS = 18V, TC = 25C Fig.19
ID Continuous drain current 53 A VGS = 18V, TC = 100C
ID(pulse) Pulsed drain current 150 A Pulse width tP limited by TJ,max Fig.22
PD Power dissipation 366 W TC= 25C,TJ = 175C Fig.20
TJ ,Tstg Operating Junction and storage temperature -55 to +175 C
TL Soldering temperature 260 C 1.6mm (0.063) from case for 10s
TM Mounting torque 1.8 Nm lbf-in M3 or 6-32 screw
Rth(j-c) Thermal resistance from junction to case 0.33 - 0.41 C/W Fig.21
V(BR)DSS Drain-source breakdown voltage 1200 V VGS = 0V, ID = 100A
VGS(th) Gate threshold voltage 2.3 - 3.6 V VDS = VGS, ID = 9mA Fig.11
VGS(th) Gate threshold voltage 2.1 V VDS = VGS, ID = 9mA, TJ = 175C
IDSS Zero gate voltage drain current 1 - 10 A VDS = 1200V, VGS = 0V
IGSS Gate source leakage current 100 nA VGS = 18V, VDS = 0V
RDS(on) Current drain-source on-state resistance 40 - 59 m VGS = 15V, ID = 32A Fig.4,5, 6
RDS(on) Current drain-source on-state resistance 67 m VGS = 15V, ID = 32A, TJ = 175C
RDS(on) Current drain-source on-state resistance 35 - 48 m VGS = 18V, ID = 32A
RDS(on) Current drain-source on-state resistance 64 m VGS = 18V, ID = 32A, TJ = 175C
gfs Transconductance 22 S VDS = 20V, ID = 32A Fig.7
gfs Transconductance 20 S VDS = 20V, ID = 32A, TJ = 175C
Rg,int Internal gate resistance 2.0 VAC = 25mV, f = 1MHz, open drain
Ciss Input capacitance 1820 pF VDS = 1000V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz Fig.17, 18
Coss Output capacitance 106 pF
Crss Reverse capacitance 4.5 pF
Eoss Coss stored energy 59 J Fig.16
Qgs Gate source charge 22 nC VDS = 800V, VGS = -4/+18V, ID = 32A Fig.12
Qgd Gate drain charge 18 nC
Qg Gate charge 60 nC
Eon Turn on switching energy 257 J VDS = 800V, VGS = -4/+18V, ID = 32A, Rg = 2.5, L = 120H Fig.26
Eoff Turn off switching energy 50 J VDS = 800V, VGS = -4/+18V, ID = 32A, Rg = 2.5, L = 120H Fig.26
tdon Turn on delay time 15 ns Fig.27
tr Rise time 9 ns Fig.27
tdoff Turn off delay time 23 ns Fig.27
tf Fall time 8 ns Fig.27
VSD Diode forward voltage 3.7 V VGS = -4V, ISD = 16A Fig.8,9, 10
VSD Diode forward voltage 3.3 V VGS = -4V, ISD = 16A, TJ = 175C
IS Continuous diode forward current 70 A VGS = -4V, Tc = 25C Note2
trr Reverse recovery time 29.5 ns VR = 800V, VGS = -4V, ISD = 32A, di/dt = 2944A/s, TJ = 175C
Qrr Reverse recovery charge 237 nC VR = 800V, VGS = -4V, ISD = 32A, di/dt = 2944A/s, TJ = 175C
Irrm Peak reverse recovery current 17.5 A VR = 800V, VGS = -4V, ISD = 32A, di/dt = 2944A/s, TJ = 175C

Note 1: when using MOSFET Body Diode VGS,max = -4 / +22V

Note 2: When using SiC Body Diode the maximum recommended VGS = -4V


2504101957_Sichainsemi-SG2M040120JJ_C42456095.pdf

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