High Current 180A MOSFET Siliup SP10HF25TO 250V with Low Gate Charge and Avalanche Energy Testing

Key Attributes
Model Number: SP10HF25TO
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
351pF
Input Capacitance(Ciss):
5.13nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
SP10HF25TO
Package:
TOLL
Product Description

Product Overview

The SP10HF25TO is a 250V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is designed for applications requiring high efficiency and performance, including PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP10HF25TO
  • Package: TOLL
  • Device Code: SP10HF25TO

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 250 V
RDS(on)TYP RDS(on) @10V 10 m
ID ID 180 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 250 V
Gate-Source Voltage VGS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current ID (Tc=25) 180 A
Continuous Drain Current ID (Tc=100) 120 A
Pulsed Drain Current IDM 720 A
Single Pulse Avalanche Energy EAS 1406 mJ
Power Dissipation PD (Tc=25) 500 W
Thermal Resistance Junction-to-Case RJC 0.25 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0 V , ID=250uA 250 285 V
Drain-Source Leakage Current IDSS VDS=200V , VGS=0V , TJ=25 10 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 3 4 5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=40A 10 12.5 m
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz 5130 pF
Output Capacitance Coss 351 pF
Reverse Transfer Capacitance Crss 21 pF
Total Gate Charge Qg VDS=200V , VGS=0-10V , ID=40A 85 nC
Gate-Source Charge Qgs 28
Gate-Drain Charge Qg d 22
Turn-On Delay Time Td(on) VDD=200V, VGS=10V , RG=1.6, ID=40A 33 nS
Rise Time Tr 15
Turn-Off Delay Time Td(off) 75 nS
Fall Time Tf 8
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 V
Maximum Body-Diode Continuous Current IS 180 A
Reverse recover time Trr IS=40A, di/dt=100A/us, Tj=25 119 nS
Reverse recovery charge Qrr 0.55 uC
Order Information
Device Package Unit/Tape
SP10HF25TO TOLL 2000
TOLL Package Information
Symbol Dimensions In Millimeters Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF.
8 10 12
K 4.25 4.40 4.55

2412041501_Siliup-SP10HF25TO_C42404762.pdf

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