ROHS compliant Siliup SP1011CNK 100V complementary MOSFET with fast switching speeds and performance
Key Attributes
Model Number:
SP1011CNK
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V;85mΩ@4.5V;85mΩ@10V;95mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA;1.8V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
27.3pF;66.4pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
32.3pF;72.3pF
Input Capacitance(Ciss):
951pF;3.769nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
20.2nC@10V;72nC@10V
Mfr. Part #:
SP1011CNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP1011CNK is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and a surface mount PDFN5X6-8L package. This device is ROHS compliant and halogen-free, undergoing 100% single pulse avalanche energy testing. It is ideal for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
- Package: PDFN5X6-8L
Technical Specifications
| SP1011CNK 100V Complementary MOSFET | |||
| Parameter | Symbol | N-Channel Rating | P-Channel Rating |
| Product Summary | |||
| V(BR)DSS | 100V | -100V | |
| RDS(on)TYP | 80m@10V, 85m@4.5V | 85m@-10V, 95m@-4.5V | |
| ID | 10A | -15A | |
| Absolute Maximum Ratings (Ta=25) | |||
| Drain-Source Voltage | VDS | 100V | -100V |
| Gate-Source Voltage | VGS | 20V | 20V |
| Continuous Drain Current (Tc=25C) | ID | 10A | -15A |
| Pulse Drain Current Tested | IDM | 40A | -60A |
| Single pulsed avalanche energy | EAS | 25 mJ | 156 mJ |
| Power Dissipation (Tc=25C) | PD | 45W | |
| Thermal Resistance Junction-to-Case | RJC | 2.8 C/W | |
| Storage Temperature Range | TSTG | -55 to 150 C | |
| Operating Junction Temperature Range | TJ | -55 to 150 C | |
| N-Channel Electrical Characteristics (Ta=25) | |||
| Drain-Source Breakdown Voltage | BVDSS | 100V (VGS=0V, ID=250uA) | |
| Drain-Source Leakage Current | IDSS | 1 uA (VDS=80V, VGS=0V) | |
| Gate-Source Leakage Current | IGSS | 100 nA (VGS=20V, VDS=0V) | |
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.5V (VGS=VDS, ID=250uA) | |
| Static Drain-Source On-Resistance | RDS(ON) | 80 - 100 m (VGS=10V, ID=8A) | |
| 85 - 115 m (VGS=4.5V, ID=6A) | |||
| Input Capacitance | Ciss | 951 pF (VDS=50V, VGS=0V, f=1MHz) | |
| Output Capacitance | Coss | 32.3 pF | |
| Reverse Transfer Capacitance | Crss | 27.3 pF | |
| Total Gate Charge | Qg | 20.2 nC (VDS=50V, VGS=10V, ID=6A) | |
| Gate-Source Charge | Qgs | 2.1 nC | |
| Gate-Drain Charge | Qgd | 4.2 nC | |
| Turn-On Delay Time | Td(on) | 6.6 nS (VDD=50V, VGS=10V, RG=3, ID=6A) | |
| Rise Time | Tr | 46 nS | |
| Turn-Off Delay Time | Td(off) | 31 nS | |
| Fall Time | Tf | 4 nS | |
| Diode Forward Voltage | VSD | 1.2V (VGS=0V, IS=1A) | |
| Maximum Body-Diode Continuous Current | IS | 10A | |
| Reverse recover time | Trr | 31 nS (IS=6A, di/dt=100A/us) | |
| Reverse recovery charge | Qrr | 23 nC | |
| P-Channel Electrical Characteristics (Ta=25) | |||
| Drain-Source Breakdown Voltage | BVDSS | -100V (VGS=0V, ID=-250uA) | |
| Drain-Source Leakage Current | IDSS | -1 uA (VDS=-80V, VGS=0V) | |
| Gate-Source Leakage Current | IGSS | 100 nA (VGS=20V, VDS=0V) | |
| Gate Threshold Voltage | VGS(th) | -1.0 - -2.5V (VGS=VDS, ID=-250uA) | |
| Static Drain-Source On-Resistance | RDS(ON) | -85 - 105 m (VGS=-10V, ID=-8A) | |
| -95 - 125 m (VGS=-4.5V, ID=-6A) | |||
| Input Capacitance | Ciss | 3769 pF (VDS=-50V, VGS=0V, f=1MHz) | |
| Output Capacitance | Coss | 72.3 pF | |
| Reverse Transfer Capacitance | Crss | 66.4 pF | |
| Total Gate Charge | Qg | 72 nC (VDS=-50V, VGS=-10V, ID=-6A) | |
| Gate-Source Charge | Qgs | 8.4 nC | |
| Gate-Drain Charge | Qgd | 17.3 nC | |
| Turn-On Delay Time | Td(on) | 11.6 nS (VDD=-50V, VGS=-10V, RG=6, ID=-5A) | |
| Rise Time | Tr | 17.6 nS | |
| Turn-Off Delay Time | Td(off) | 115.2 nS | |
| Fall Time | Tf | 42 nS | |
| Diode Forward Voltage | VSD | -1.2V (VGS=0V, IS=-1A) | |
| Maximum Body-Diode Continuous Current | IS | -15A | |
| Reverse recover time | Trr | 79 nS (IS=-5A, di/dt=-100A/us) | |
| Reverse recovery charge | Qrr | 141 nC | |
| Package Dimensions (PDFN5X6-8L) | |||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | |
| A | 0.900 - 1.000 | 0.035 - 0.039 | |
| A3 | 0.254 REF. | 0.010 REF. | |
| D | 4.944 - 5.096 | 0.195 - 0.201 | |
| E | 5.974 - 6.126 | 0.235 - 0.241 | |
| D1 | 1.470 - 1.870 | 0.058 - 0.074 | |
| D2 | 0.470 - 0.870 | 0.019 - 0.034 | |
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | |
| D3 | 4.824 - 4.976 | 0.190 - 0.196 | |
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | |
| k | 1.190 - 1.390 | 0.047 - 0.055 | |
| b | 0.350 - 0.450 | 0.014 - 0.018 | |
| e | 1.270 TYP. | 0.050 TYP. | |
| L | 0.559 - 0.711 | 0.022 - 0.028 | |
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | |
| H | 0.574 - 0.726 | 0.023 - 0.029 | |
| 10 - 12 | 10 - 12 | ||
2504101957_Siliup-SP1011CNK_C22385429.pdf
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