Power Control Siliup 2N7002KBDW Dual N Channel MOSFET with High Saturation Current and ESD Protection
Key Attributes
Model Number:
2N7002KBDW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
-
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002KBDW
Package:
SOT-363
Product Description
Product Overview
The 2N7002KBDW is a 60V dual N-Channel MOSFET featuring a high-density cell design for low RDS(on). It functions as a voltage-controlled small signal switch, offering a rugged and reliable solution with high saturation current capability and ESD protection. This MOSFET is suitable for applications such as DC/DC converters and load switches for portable devices.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Series: 2N7002KBDW
- Technology: N-Channel MOSFET
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | |||
| Drain-Source On-Resistance | RDS(on)MAX | @10V | 3 | |||
| @4.5V | 4 | |||||
| Continuous Drain Current | ID | 340 | mA | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 340 | mA | |||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V,VGS = 0V | 100 | nA | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 10 | uA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1 | 1.5 | 2.5 | V |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =100mA | 1.6 | 3 | ||
| VGS =4.5V, ID =50mA | 2.3 | 4 | ||||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | 50 | pF | ||
| Output Capacitance | Coss | 25 | pF | |||
| Reverse Transfer Capacitance | Crss | pF | ||||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDD=25 V, RL=50 ID=500mA,VGEN=10V, RG=25 | 20 | ns | ||
| Turn-off delay time | td(off) | 40 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS =0V, IS=115mA | 0.6 | 1.0 | V | |
| Package Information (SOT-363) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.10 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.00 | ||||
| b | 0.15 | 0.35 | ||||
| c | 0.10 | 0.15 | ||||
| D | 2.00 | 2.20 | ||||
| E | 1.15 | 1.35 | ||||
| E1 | 2.15 | 2.40 | ||||
| e | 0.65 | TYP. | ||||
| e1 | 1.20 | 1.40 | ||||
| L | 0.26 | 0.46 | ||||
2411212332_Siliup-2N7002KBDW_C41355118.pdf
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