Low Switching Loss Silicon Carbide MOSFET Sichainsemi SG2M040075LJ for High Speed Power Applications
Key Attributes
Model Number:
SG2M040075LJ
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
64A
Operating Temperature -:
-55℃~+175℃
RDS(on):
40mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
6pF
Output Capacitance(Coss):
127pF
Input Capacitance(Ciss):
1.54nF
Pd - Power Dissipation:
268W
Gate Charge(Qg):
48nC
Mfr. Part #:
SG2M040075LJ
Package:
TO-247-4L
Product Description
Product Overview
The SG2M040075LJ is a 750V Silicon Carbide (SiC) Power MOSFET from SiChain Semiconductor, designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. Its fast intrinsic diode with low reverse recovery (Qrr) and temperature-independent turn-off switching losses contribute to improved efficiency and reduced cooling requirements. This MOSFET is halogen-free and RoHS compliant, making it suitable for demanding applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.
Product Attributes
- Brand: SiChain Semiconductor ()
- Product Line: TriQSiCTM
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Compliance: Halogen free, RoHS compliant
- Certifications/Standards: EU Directive 2011/65/EC (RoHS2)
Technical Specifications
| Parameter | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|
| Product Type | SG2M040075LJ | - | - | - |
| Drain Source Voltage (VDS,max) | 750 | V | VGS = 0V, ID = 100A | - |
| Gate Source Voltage (VGS,max) | -8 /+22 | V | Absolute maximum values | Note 1 |
| Gate Source Voltage (VGSop) | -4 /+18 | V | Recommended operational values | - |
| Continuous Drain Current (ID) | 64 | A | VGS = 18V, TC = 25C | Fig.19 |
| Continuous Drain Current (ID) | 45 | A | VGS = 18V, TC = 100C | - |
| Pulsed Drain Current (ID(pulse)) | 128 | A | Pulse width tP limited by TJ,max | Fig.22 |
| Power Dissipation (PD) | 268 | W | TC= 25C,TJ = 175C | Fig.20 |
| Operating Junction and Storage Temperature (TJ ,Tstg) | -55 to +175 | C | - | - |
| Soldering Temperature (TL) | 260 | C | 1.6mm (0.063) from case for 10s | - |
| Mounting Torque | 1.8 | Nm (lbf-in) | M3 or 6-32 screw | - |
| Thermal Resistance (Rth(j-c)) | Typ. 0.45, Max. 0.56 | C/W | - | Fig.21 |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 750 | V | VGS = 0V, ID = 100A | - |
| Gate Threshold Voltage (VGS(th)) | Typ. 2.8, Max. 3.6 | V | VDS = VGS, ID = 8.5mA | Fig.11 |
| Gate Threshold Voltage (VGS(th)) | Typ. 2.2 | V | VDS = VGS, ID = 8.5mA, TJ = 175C | - |
| Zero Gate Voltage Drain Current (IDSS) | Typ. 1, Max. 10 | A | VDS = 750V, VGS = 0V | - |
| Gate Source Leakage Current (IGSS) | Max. 100 | nA | VGS = 18V, VDS = 0V | - |
| Drain-Source On-State Resistance (RDS(on)) | Typ. 40, Max. 52 | m | VGS = 18V, ID = 22A | Fig.4,5, 6 |
| Drain-Source On-State Resistance (RDS(on)) | Typ. 65 | m | VGS = 18V, ID = 22A, TJ = 175C | - |
| Transconductance (gfs) | Typ. 16 | S | VDS = 20V, ID = 22A | Fig.7 |
| Transconductance (gfs) | Typ. 15 | S | VDS = 20V, ID = 22A, TJ = 175C | - |
| Internal Gate Resistance (Rg,int) | Typ. 2.6 | VAC = 25mV, f = 1MHz, open drain | - | |
| Input Capacitance (Ciss) | Typ. 1540 | pF | VDS = 500V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz | Fig.17, 18 |
| Output Capacitance (Coss) | Typ. 127 | pF | - | - |
| Reverse Capacitance (Crss) | Typ. 6.0 | pF | - | - |
| Stored Energy (Eoss) | Typ. 20 | J | - | Fig.16 |
| Gate Source Charge (Qgs) | Typ. 16 | nC | VDS = 500V, VGS = -4/+18V, ID = 22A | Fig.12 |
| Gate Drain Charge (Qgd) | Typ. 15 | nC | - | - |
| Gate Charge (Qg) | Typ. 48 | nC | - | - |
| Turn On Switching Energy (Eon) | Typ. 107 | J | VDS = 500V, VGS = -4/+18V, ID = 22A, Rg = 2.5, L = 120H | Fig.26 |
| Turn Off Switching Energy (Eoff) | Typ. 31 | J | - | - |
| Turn On Delay Time (td(on)) | Typ. 12.5 | ns | - | Fig.27 |
| Rise Time (tr) | Typ. 13 | ns | - | - |
| Turn Off Delay Time (td(off)) | Typ. 27 | ns | - | - |
| Fall Time (tf) | Typ. 10 | ns | - | - |
| Diode Forward Voltage (VSD) | Typ. 3.6 | V | VGS = -4V, ISD = 11A | Fig.8,9, 10 |
| Diode Forward Voltage (VSD) | Typ. 3.2 | V | VGS = -4V, ISD = 11A, TJ = 175C | - |
| Continuous Diode Forward Current (IS) | Typ. 60 | A | VGS = -4V, Tc = 25C | Note 2 |
| Reverse Recovery Time (trr) | Typ. 21 | ns | VR = 500V, VGS = -4V, ISD = 22A, di/dt = 2135A/s, TJ = 175C | - |
| Reverse Recovery Charge (Qrr) | Typ. 214 | nC | - | - |
| Peak Reverse Recovery Current (Irrm) | Typ. 18 | A | - | - |
| Package | TO-247-4L | - | - | - |
| Marking | SG2M040075LJ | - | - | - |
2504101957_Sichainsemi-SG2M040075LJ_C42456088.pdf
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