Siliup SP60P90T1 P Channel MOSFET 60V Voltage and 4A Current Capacity for Power Conversion Solutions
Key Attributes
Model Number:
SP60P90T1
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V;110mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
1 P-Channel
Output Capacitance(Coss):
87pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
960pF
Gate Charge(Qg):
15.7nC@10V
Mfr. Part #:
SP60P90T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP60P90T1 is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. Designed for high power and current handling capabilities, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers key electrical characteristics including a drain-source breakdown voltage of -60V and a continuous drain current of -4A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Device Code: SP60P90T1
- Package: SOT-23-3L
- Marking: 60P90
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @ -10V | 90 | m | ||
| @ -4.5V | 110 | m | ||||
| Continuous Drain Current | ID | -4 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -4 | A | |||
| Pulse Drain Current | IDM | Tested | -16 | A | ||
| Power Dissipation | PD | 0.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 156 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1.0 | -1.5 | -2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-3A | 90 | 120 | m | |
| VGS=-4.5V , ID =-2A | 110 | 150 | m | |||
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 960 | pF | ||
| Output Capacitance | Coss | 87 | pF | |||
| Reverse Transfer Capacitance | Crss | 38 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-4A | 15.7 | nC | ||
| Gate-Source Charge | Qgs | 3 | ||||
| Gate-Drain Charge | Qg d | 3.5 | ||||
| Turn-On Delay Time | td(on) | VDD=-30V VGS=-10V , RG=3 , ID=-5A | 9 | nS | ||
| Turn-On Rise Time | tr | 11 | ||||
| Turn-Off Delay Time | td(off) | 25 | ||||
| Turn-Off Fall Time | tf | 12 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-23-3L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | Typ. | ||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E1 | 1.500 | 1.700 | ||||
| E | 2.650 | 2.950 | ||||
| e | 0.950 | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP60P90T1 | SOT-23-3L | 3000 | ||||
2504101957_Siliup-SP60P90T1_C41354818.pdf
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