P Channel MOSFET Siliup SP2231ND 20V Drain Source Voltage Designed for Surface Mount Battery Switch
Key Attributes
Model Number:
SP2231ND
Product Custom Attributes
Pd - Power Dissipation:
1.4W
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
1.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@4.5V;180mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 P-Channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
270pF
Gate Charge(Qg):
2.7nC@4.5V
Mfr. Part #:
SP2231ND
Package:
PDFN1212-3L
Product Description
Product Overview
The SP2231ND is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount MOSFET is suitable for applications such as battery switches and DC/DC converters. It offers a robust performance with key electrical characteristics optimized for efficient operation.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package Type: PDFN1212-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @ -4.5V | 130 | 180 | m | |
| Static Drain-Source On-Resistance | RDS(on) | @ -2.5V | 180 | 270 | m | |
| Continuous Drain Current | ID | -1.6 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -1.6 | A | |||
| Pulse Drain Current | IDM | -6.4 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 89.3 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.65 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-1A | 130 | 180 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-500mA | 180 | 270 | m | |
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 270 | pF | ||
| Output Capacitance | Coss | 55 | pF | |||
| Reverse Transfer Capacitance | Crss | 30 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-2A | 2.7 | nC | ||
| Gate-Source Charge | Qgs | 0.46 | ||||
| Gate-Drain Charge | Qg d | 0.7 | ||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3 , RL=5 | 10 | nS | ||
| Turn-On Rise Time | tr | 5 | ||||
| Turn-Off Delay Time | td(off) | 21 | ||||
| Turn-Off Fall Time | tf | 7 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information | ||||||
| Package Type | PDFN1212-3L | |||||
| Order Information | SP2231ND | |||||
| Unit/Tape | 5000 | |||||
| PDFN1212-3L Package Dimensions | ||||||
| Symbol | Min(mm) | TYP(mm) | Max(mm) | |||
| A | 0.45 | 0.50 | 0.55 | |||
| A1 | 0.00 | 0.03 | 0.05 | |||
| C | 0.152 | |||||
| b1 | 0.27 | 0.32 | 0.37 | |||
| L | 0.25 | 0.30 | 0.35 | |||
| D | 1.15 | 1.20 | 1.25 | |||
| e | 0.80 | |||||
| E | 1.15 | 1.20 | 1.25 | |||
| b2 | 0.17 | 0.22 | 0.27 | |||
2504101957_Siliup-SP2231ND_C41354954.pdf
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