1200V Silicon Carbide MOSFET Siliup SP52N120CTF with Low RDSon and High Voltage Blocking Capability
Key Attributes
Model Number:
SP52N120CTF
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+175℃
RDS(on):
32mΩ@18V
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Input Capacitance(Ciss):
3.177nF
Output Capacitance(Coss):
142pF
Pd - Power Dissipation:
357W
Gate Charge(Qg):
139nC
Mfr. Part #:
SP52N120CTF
Package:
TO-247
Product Description
Product Overview
The SP52N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. This RoHS compliant device is suitable for a wide range of applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, Motor Drives, High Voltage DC/DC Converters, and Switching Mode Power Supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC) MOSFET
- Package: TO-247
- Certification: RoHS Compliant
- Product Code: SP52N120CTF
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Units |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 1200 | V | |
| On-Resistance (Typ.) | RDS(on)TYP | @18V | 32 | m |
| Continuous Drain Current | ID | 52 | A | |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | (Ta=25) | 1200 | V |
| Gate-Source Voltage (Max) | VGSMAX | -10/+22 | V | |
| Recommended Gate-Source Voltage | VGSop | -5/+18 | V | |
| Continuous Drain Current | ID | (Tc=25) | 78 | A |
| Continuous Drain Current | ID | (Tc=100) | 52 | A |
| Pulsed Drain Current | IDM | 158 | A | |
| Single Pulse Avalanche Energy | EAS | 1150 | mJ | |
| Power Dissipation | PD | (Tc=25) | 357 | W |
| Power Dissipation | PD | (Tc=100) | 238 | W |
| Thermal Resistance Junction-Case | RJC | 0.42 | /W | |
| Storage Temperature Range | TSTG | -55 to 175 | ||
| Operating Junction Temperature Range | TJ | -55 to 175 | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 1200 | V |
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | 1 | uA |
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | 100 | uA |
| Gate-Source Leakage Current | IGSS | VGS=18V , VDS=0V, TJ=25 | 1 | nA |
| Gate-Source Leakage Current | IGSS | VGS=18V , VDS=0V, TJ=25 | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =11.5mA, Tj=25 | 2.8 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =11.5mA, Tj=25 | 2.0 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =11.5mA, Tj=25 | 4.0 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =11.5mA, Tj=175 | 2.3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V , ID=40A, Tj=25 | 32 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V , ID=40A, Tj=25 | 40 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V , ID=40A, Tj=175 | 52 | m |
| Input Capacitance | Ciss | VDS=1000V , VGS=0V , f=100KHz | 3177 | pF |
| Output Capacitance | Coss | VDS=1000V , VGS=0V , f=100KHz | 142 | pF |
| Reverse Transfer Capacitance | Crss | VDS=1000V , VGS=0V , f=100KHz | 13 | pF |
| Total Gate Charge | Qg | VDS=800V , VGS= -5/+18V , ID=40A | 139 | nC |
| Gate-Source Charge | Qgs | VDS=800V , VGS= -5/+18V , ID=40A | 42 | nC |
| Gate-Drain Charge | Qgd | VDS=800V , VGS= -5/+18V , ID=40A | 47 | nC |
| Turn-On Delay Time | Td(on) | VDS=800V , VGS= -5/+18V , ID=40A RG=4.5 | 18 | ns |
| Rise Time | Tr | VDS=800V , VGS= -5/+18V , ID=40A RG=4.5 | 14 | ns |
| Turn-Off Delay Time | Td(off) | VDS=800V , VGS= -5/+18V , ID=40A RG=4.5 | 29 | ns |
| Fall Time | Tf | VDS=800V , VGS= -5/+18V , ID=40A RG=4.5 | 10 | ns |
| Turn-On Energy | Eon | VDS=800V , VGS= -5/+18V , ID=40A RG=4.5 | 223 | J |
| Turn-Off Energy | Eoff | VDS=800V , VGS= -5/+18V , ID=40A RG=4.5 | 90 | J |
| Total Switching Loss | Etot | VDS=800V , VGS= -5/+18V , ID=40A RG=4.5 | 313 | J |
| Diode Forward Voltage | VSD | VGS= -5V , ISD=20A , TJ=25 | 4.7 | V |
| Diode Forward Voltage | VSD | VGS= -5V , ISD=20A , TJ=175 | 4.2 | V |
| Reverse Recovery Time | trr | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | 23 | ns |
| Reverse Recovery Charge | Qrr | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | 696 | nC |
| Peak Reverse Recovery Current | Irrm | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | 43 | A |
| Package Information (TO-247) | ||||
| Pinout | 1:G 2:D 3:S | |||
| Dimensions (mm) | A | 4.850 - 5.150 | mm | |
| Dimensions (mm) | A1 | 2.200 - 2.600 | mm | |
| Dimensions (mm) | b | 1.000 - 1.400 | mm | |
| Dimensions (mm) | b1 | 2.800 - 3.200 | mm | |
| Dimensions (mm) | b2 | 1.800 - 2.200 | mm | |
| Dimensions (mm) | c | 0.500 - 0.700 | mm | |
| Dimensions (mm) | c1 | 1.900 - 2.100 | mm | |
| Dimensions (mm) | D | 15.450 - 15.750 | mm | |
| Dimensions (mm) | E1 | 3.500 REF. | mm | |
| Dimensions (mm) | E2 | 3.600 REF. | mm | |
| Dimensions (mm) | L | 40.900 - 41.300 | mm | |
| Dimensions (mm) | L1 | 24.800 - 25.100 | mm | |
| Dimensions (mm) | L2 | 20.300 - 20.600 | mm | |
| Dimensions (mm) | 7.100 - 7.300 | mm | ||
| Dimensions (mm) | e | 5.450 TYP. | mm | |
| Dimensions (mm) | H | 5.980 REF. | mm | |
| Dimensions (mm) | h | 0.000 - 0.300 | mm | |
2504101957_Siliup-SP52N120CTF_C45351241.pdf
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