20 Volt N Channel MOSFET Siliup SP20N09T1 featuring SOT 23 3L Package for power switching applications
Key Attributes
Model Number:
SP20N09T1
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
10mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
105pF
Number:
1 N-channel
Output Capacitance(Coss):
162pF
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
900pF
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
SP20N09T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP20N09T1 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. The device is available in a surface mount SOT-23-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOT-23-3L
- Device Code: 20N09
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 10 | 13 | m | |
| Static Drain-Source On-Resistance | RDS(on) | @2.5V | 13 | 18 | m | |
| Continuous Drain Current | ID | 7 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | ||
| Continuous Drain Current | ID | 7 | A | |||
| Pulse Drain Current | IDM | Tested | 28 | A | ||
| Power Dissipation | PD | 1.25 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 100 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.5 | 0.7 | 1.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=6A | - | 10 | 13 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=5A | - | 13 | 18 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 900 | - | pF |
| Output Capacitance | Coss | - | 162 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 105 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=10V , ID=20A | - | 15 | - | nC |
| Gate-Source Charge | Qgs | - | 1.8 | - | ||
| Gate-Drain Charge | Qg | - | 2.8 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=10V VGS=10V , RG=3, ID=5A | - | 4.5 | - | nS |
| Turn-On Rise Time | tr | - | 9.2 | - | ||
| Turn-Off Delay Time | td(off) | - | 18.7 | - | ||
| Turn-Off Fall Time | tf | - | 3.3 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (Dimensions in millimeters) | ||||||
| Symbol | Min. | Max. | Typ. | |||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E | 1.500 | 1.700 | ||||
| E1 | 2.650 | 2.950 | ||||
| e | 0.950 | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP20N09T1_C41354900.pdf
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