N Channel 60V Power MOSFET Siliup SP60N05GP8 with Single Pulse Avalanche Energy Tested and Low RDSon
Key Attributes
Model Number:
SP60N05GP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V;8.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 N-channel
Output Capacitance(Coss):
660pF
Pd - Power Dissipation:
4W
Input Capacitance(Ciss):
2.304nF
Gate Charge(Qg):
37.5nC@10V
Mfr. Part #:
SP60N05GP8
Package:
SOP-8L
Product Description
Product Overview
The SP60N05GP8 is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Split Gate Trench Technology
- Testing: 100% Single Pulse Avalanche Energy Test
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 60 | V | |
| RDS(on) Typ | 5.5 | m | @10V | |
| RDS(on) Typ | 8.5 | m | @4.5V | |
| ID | 18 | A | ||
| Continuous Drain Current (Ta=100C) | ID | 12 | A | |
| Pulse Drain Current Tested | IDM | 72 | A | |
| Single Pulse Avalanche Energy | EAS | 132 | mJ | |
| Power Dissipation | PD | 4 | W | |
| Thermal Resistance Junction-to-Ambient | RJA | 31.25 | C/W | |
| Maximum Junction Temperature | TJ | -55 to 150 | C | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250mA |
| Zero Gate Voltage Drain Current | IDSS | - | uA | VDS=48V, VGS=0V (Max: 1) |
| Gate Leakage Current | IGSS | - | nA | VGS=20V, VDS=0V (Max: 100) |
| Gate Threshold Voltage | VGS(th) | 1.7 | V | VDS=VGS, ID=250uA (Typ) |
| Drain-Source On-state Resistance | RDS(ON) | 5.5 | m | VGS=10V, ID=20A (Typ) |
| Drain-Source On-state Resistance | RDS(ON) | 8.5 | m | VGS=4.5V, ID=10A (Typ) |
| Input Capacitance | Ciss | 2304 | pF | VGS=0V, VDS=30V,F=1MHz (Typ) |
| Output Capacitance | Coss | 660 | pF | VGS=0V, VDS=30V,F=1MHz (Typ) |
| Reverse Transfer Capacitance | Crss | 19 | pF | VGS=0V, VDS=30V,F=1MHz (Typ) |
| Total Gate Charge | Qg | 37.5 | nC | VDS=30V, VGS=10V, ID=20A (Typ) |
| Gate-Source Charge | Qgs | 6.5 | nC | VDS=30V, VGS=10V, ID=20A (Typ) |
| Gate-Drain Charge | Qg d | 10 | nC | VDS=30V, VGS=10V, ID=20A (Typ) |
| Turn-On Delay Time | td(on) | 9 | nS | VDD=30V, ID=20A, VGS=10V, RG=4.7 (Typ) |
| Rise Time | tr | 35 | nS | VDD=30V, ID=20A, VGS=10V, RG=4.7 (Typ) |
| Turn-Off Delay Time | td(off) | 32 | nS | VDD=30V, ID=20A, VGS=10V, RG=4.7 (Typ) |
| Fall Time | tf | 58 | nS | VDD=30V, ID=20A, VGS=10V, RG=4.7 (Typ) |
| Source-Drain Diode Forward Voltage | VSD | - | V | VGS=0V , IS=1A , TJ=25 (Max: 1.2) |
| Maximum Body-Diode Continuous Current | IS | - | A | (Max: 18) |
| Reverse Recovery Time | Trr | 27 | nS | IS=20 A,di/dt=100 A/sTJ=25 (Typ) |
| Reverse Recovery Charge | Qrr | 39 | nC | IS=20 A,di/dt=100 A/sTJ=25 (Typ) |
| Model | SP60N05GP8 | |||
| Package | SOP-8L | |||
| Order Information | SP60N05GP8 | SOP-8L, 4000 Unit/Tape |
| SOP-8L Package Information (Dimensions in Millimeters) | ||
|---|---|---|
| Symbol | Min. | Max. |
| A | 1.35 | 1.75 |
| A1 | 0.10 | 0.25 |
| A2 | 1.35 | 1.55 |
| b | 0.33 | 0.51 |
| c | 0.17 | 0.25 |
| D | 4.80 | 5.00 |
| e | 1.27 | REF. |
| E | 5.80 | 6.20 |
| E1 | 3.80 | 4.00 |
| L | 0.40 | 1.27 |
| 0 | 8 | |
2504101957_Siliup-SP60N05GP8_C22466767.pdf
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