Power MOSFET 30V N Channel Siliup SP30N01GNP with Fast Switching and Low Gate Charge Characteristics
Key Attributes
Model Number:
SP30N01GNP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
265A
RDS(on):
1.6mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
156W
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
SP30N01GNP
Package:
PDFN5X6-8L
Product Description
Siliup Semiconductor SP30N01GNP: 30V N-Channel Power MOSFET
The SP30N01GNP is a 30V N-Channel Power MOSFET from Siliup Semiconductor, designed for efficient power management applications. It features fast switching speeds, low gate charge, and low on-resistance (RDS(on)), making it suitable for PWM applications, hard-switched, and high-frequency circuits. The MOSFET utilizes advanced split gate trench technology and a Cu-Clip process for enhanced performance and reliability. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N01GNP
- Technology: Advanced Split Gate Trench Technology
- Process: Cu-Clip Process
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) Typ. | @10V | 0.65 | m | |||
| RDS(on) Typ. | @4.5V | 1.10 | m | |||
| Continuous Drain Current | ID | 265 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 265 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 177 | A | ||
| Pulsed Drain Current | IDM | 1060 | A | |||
| Single Pulse Avalanche Energy | EAS | 645 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 156 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.8 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 0.65 | 0.78 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 1.10 | 1.60 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 4529 | - | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz | - | 2993 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz | - | 31 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=40A | - | 62 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V , VGS=10V , ID=40A | - | 14 | - | nC |
| Gate-Drain Charge | Qgd | VDS=15V , VGS=10V , ID=40A | - | 5 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V , VGS=10V , RG=1.6 ID=40A | - | 10.5 | - | nS |
| Rise Time | Tr | VDD=15V , VGS=10V , RG=1.6 ID=40A | - | 41 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=15V , VGS=10V , RG=1.6 ID=40A | - | 72 | - | nS |
| Fall Time | Tf | VDD=15V , VGS=10V , RG=1.6 ID=40A | - | 17 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 265 | A | |
| Reverse Recovery Time | Trr | IS=100A, di/dt=200A/us, TJ=25 | - | 30 | - | nS |
| Reverse Recovery Charge | Qrr | IS=100A, di/dt=200A/us, TJ=25 | - | 65 | - | nC |
Package Information (PDFN5X6-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP30N01GNP | PDFN5X6-8L | 5000 |
2505291610_Siliup-SP30N01GNP_C48888446.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
