Dual P Channel MOSFET Siliup SP2301DTS 20V 3A Drain Current SOT 23 6L Package for Battery Switches
Key Attributes
Model Number:
SP2301DTS
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
RDS(on):
80mΩ@4.5V;100mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
2 P-Channel
Output Capacitance(Coss):
136pF
Input Capacitance(Ciss):
545pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
3.5nC@2.5V
Mfr. Part #:
SP2301DTS
Package:
SOT-23-6
Product Description
Product Overview
The SP2301DTS is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-6L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Dual P-Channel MOSFET
- Package: SOT-23-6L
- Device Code: 2301D
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @ -4.5V | 80 | m | |||
| RDS(on) | @ -2.5V | 100 | m | |||
| Continuous Drain Current | ID | -3 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -3 | A | |||
| Pulse Drain Current | IDM | Tested | -12 | A | ||
| Power Dissipation | PD | 1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 125 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.7 | -0.9 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | 80 | 110 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-2A | 100 | 140 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-8V , VGS=0V , f=1MHz | 545 | pF | ||
| Output Capacitance | Coss | 136 | pF | |||
| Reverse Transfer Capacitance | Crss | 78 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-2.5V , ID=-3A | 3.5 | nC | ||
| Gate-Source Charge | Qgs | 0.8 | nC | |||
| Gate-Drain Charge | Qgd | 1.5 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-4V VGS=-4.5V , RG=6.2 , ID=-1A | 6.6 | nS | ||
| Turn-On Rise Time | tr | 18 | nS | |||
| Turn-Off Delay Time | td(off) | 24 | nS | |||
| Turn-Off Fall Time | tf | 16 | nS | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| SOT-23-6L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 1.050 | 1.250 | 0.041 | 0.049 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 1.050 | 1.150 | 0.041 | 0.045 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.100 | 0.200 | 0.004 | 0.008 |
| D | 2.820 | 3.020 | 0.111 | 0.119 |
| E | 1.500 | 1.700 | 0.059 | 0.067 |
| E1 | 2.650 | 2.950 | 0.104 | 0.116 |
| e | 0.950(BSC) | 0.037(BSC) | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.300 | 0.600 | 0.012 | 0.024 |
| 0 | 8 | 0 | 8 | |
2504101957_Siliup-SP2301DTS_C41355155.pdf
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