SP30N03NJ 30V N Channel MOSFET Designed for Hard Switched and High Frequency Power Applications
Product Overview
The SP30N03NJ is a 30V N-Channel MOSFET designed for high-performance power switching applications. It features an ultra-low RDS(ON) due to its high-density cell design, offering excellent stability and uniformity with high EAS. This MOSFET is ideal for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems, thanks to its efficient heat dissipation capabilities.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP30N03NJ
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | 30 | V | ||||
| RDS(ON) TYP | @10V | 3.2 | m | |||
| RDS(ON) TYP | @4.5V | 4.5 | m | |||
| ID | 65 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | (TC=25) | 65 | A | ||
| Pulsed Drain Current | IDM | 260 | A | |||
| Maximum Power Dissipation | PD | (TC=25) | 36 | W | ||
| Single pulse avalanche energy | EAS | (Note 5) | 151 | mJ | ||
| Thermal Resistance, Junction-to-Case | RJC | (Note 2) | 3.4 | /W | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.5 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A (Note 3) | - | 3.2 | 4.2 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=15A (Note 3) | - | 4.5 | 6 | m |
| Dynamic Characteristics (Note 4) | ||||||
| Input Capacitance | CIss | VDS=15V, VGS=0V, f=1.0MHz | - | 3600 | - | PF |
| Output Capacitance | Coss | - | 380 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 290 | - | PF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=15V, ID=20A, VGS=10V, RGEN=3 | - | 12 | - | nS |
| Turn-on Rise Time | tr | - | 15 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 40 | - | nS | |
| Turn-Off Fall Time | tf | - | 14 | - | nS | |
| Total Gate Charge | Qg | VDS=15V, ID=45A, VGS=10V | - | 60 | - | nC |
| Gate-Source Charge | Qgs | - | 8.2 | - | nC | |
| Gate-Drain Charge | Qgd | - | 16.4 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=20A (Note 3) | - | - | 1.2 | V |
| Diode Forward Current | IS | (Note 2) | - | - | 45 | A |
| Reverse Recovery Time | trr | TJ = 25C, IF = 20A, di/dt = 100A/s (Note 3) | - | 29 | - | nS |
| Reverse Recovery Charge | Qrr | - | 32 | - | nC | |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 | REF. | 0.006 | REF. |
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 |
2505291610_Siliup-SP30N03NJ_C48888436.pdf
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