SP30N03NJ 30V N Channel MOSFET Designed for Hard Switched and High Frequency Power Applications

Key Attributes
Model Number: SP30N03NJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
290pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.6nF
Output Capacitance(Coss):
380pF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
SP30N03NJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP30N03NJ is a 30V N-Channel MOSFET designed for high-performance power switching applications. It features an ultra-low RDS(ON) due to its high-density cell design, offering excellent stability and uniformity with high EAS. This MOSFET is ideal for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems, thanks to its efficient heat dissipation capabilities.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP30N03NJ
  • Package: PDFN3X3-8L

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
Product Summary
V(BR)DSS 30 V
RDS(ON) TYP @10V 3.2 m
RDS(ON) TYP @4.5V 4.5 m
ID 65 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID (TC=25) 65 A
Pulsed Drain Current IDM 260 A
Maximum Power Dissipation PD (TC=25) 36 W
Single pulse avalanche energy EAS (Note 5) 151 mJ
Thermal Resistance, Junction-to-Case RJC (Note 2) 3.4 /W
Operating Junction and Storage Temperature Range TJ, TSTG -55 175
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 30 - - V
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V - - 1 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1 1.5 2.5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A (Note 3) - 3.2 4.2 m
Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=15A (Note 3) - 4.5 6 m
Dynamic Characteristics (Note 4)
Input Capacitance CIss VDS=15V, VGS=0V, f=1.0MHz - 3600 - PF
Output Capacitance Coss - 380 - PF
Reverse Transfer Capacitance Crss - 290 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) VDD=15V, ID=20A, VGS=10V, RGEN=3 - 12 - nS
Turn-on Rise Time tr - 15 - nS
Turn-Off Delay Time td(off) - 40 - nS
Turn-Off Fall Time tf - 14 - nS
Total Gate Charge Qg VDS=15V, ID=45A, VGS=10V - 60 - nC
Gate-Source Charge Qgs - 8.2 - nC
Gate-Drain Charge Qgd - 16.4 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage VSD VGS=0V, IS=20A (Note 3) - - 1.2 V
Diode Forward Current IS (Note 2) - - 45 A
Reverse Recovery Time trr TJ = 25C, IF = 20A, di/dt = 100A/s (Note 3) - 29 - nS
Reverse Recovery Charge Qrr - 32 - nC

Package Information

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 2.300 2.600 0.091 0.102
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
9 13 9 13

2505291610_Siliup-SP30N03NJ_C48888436.pdf
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