60V complementary MOSFET Siliup SP6023CNK designed for high reliability in power management systems
Key Attributes
Model Number:
SP6023CNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A;35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@10V;30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA;1.8V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
106pF;120pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.64nF;2.417nF
Output Capacitance(Coss):
120pF;179pF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
42nC@4.5V;46.5nC@10V
Mfr. Part #:
SP6023CNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP6023CNK is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, this device offers fast switching speeds and a surface mount package, making it suitable for applications such as DC-DC converters and motor control. It is ROHS compliant and Halogen-Free, with 100% single pulse avalanche energy testing for reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP6023CNK
- Certifications: ROHS Compliant & Halogen-Free
- Package: PDFN5X6-8L
- Device Code: 6023C
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Rating | P-Channel Conditions | P-Channel Rating | Unit | |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | VGS=0V | 60 | VGS=0V | -60 | V | |
| Gate-Source Voltage | VGS | - | ±20 | - | ±20 | V | |
| Continuous Drain Current (Tc=25°C) | ID | - | 20 | - | -35 | A | |
| Pulse Drain Current Tested | IDM | - | 80 | - | -140 | A | |
| Single pulsed avalanche energy | EAS | VDD=30V, VGS=10V, L=0.5mH, Rg=25Ω | 40 | VDD=-30V, VGS=-10V, L=0.5mH, Rg=25Ω | 115 | mJ | |
| Power Dissipation (Tc=25°C) | PD | - | 45 | - | - | W | |
| Thermal Resistance Junction-to-Case | RθJC | - | 2.7 | - | - | °C/W | |
| Storage Temperature Range | TSTG | - | -55 to 150 | - | - | °C | |
| Operating Junction Temperature Range | TJ | - | -55 to 150 | - | - | °C | |
| N-Electrical Characteristics (Ta=25°C, unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V, TJ=25°C | - | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 - 2.5 | VGS=VDS, ID=-250uA | -1.0 - -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=10A | 23 - 29 | VGS=-10V, ID=-10A | 30 - 38 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=5A | 30 - 40 | VGS=-4.5V, ID=-5A | 35 - 47 | mΩ | |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 1640 | VDS=-30V, VGS=0V, f=1MHz | 2417 | pF | |
| Output Capacitance | Coss | - | 120 | - | 179 | pF | |
| Reverse Transfer Capacitance | Crss | - | 106 | - | 120 | pF | |
| Total Gate Charge | Qg | VDS=48V, VGS=4.5V, ID=10A | 42 | VDS=-30V, VGS=-10V, ID=-6A | 46.5 | nC | |
| Gate-Source Charge | Qgs | - | 8 | - | 9.1 | - | |
| Gate-Drain Charge | Qgd | - | 11.5 | - | 9.2 | - | |
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V, RG=3Ω, ID=10A | 9 | VDD=-30V, VGS=-10V, RG=3Ω, ID=-6A | 9.8 | nS | |
| Rise Time | Tr | - | 10.5 | - | 6.1 | - | |
| Turn-Off Delay Time | Td(off) | - | 36 | - | 44 | - | |
| Fall Time | Tf | - | 5 | - | 12.7 | - | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25°C | - | 1.2 | VGS=0V, IS=-1A, TJ=25°C | -1.2 | V |
| Diode Continuous Current | IS | - | 20 | - | -35 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25°C | 35 | IS=-20A, di/dt=-100A/us, Tj=25°C | 25 | nS | |
| Reverse recovery charge | Qrr | - | 52 | - | 55 | nC | |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
|---|---|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |||
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254 REF. | 0.010 REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 1.470 | 1.870 | 0.058 | 0.074 | ||
| D2 | 0.470 | 0.870 | 0.019 | 0.034 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D3 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270 TYP. | 0.050 TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| θ | 10° - 12° | 10° - 12° | ||||
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP6023CNK | PDFN5X6-8L | 5000 |
2504101957_Siliup-SP6023CNK_C22385430.pdf
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