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quality Siliup SP2502KT2 N Channel MOSFET 25V 0.75A Surface Mount Device Featuring 2KV ESD Protection for Power Control factory
quality Siliup SP2502KT2 N Channel MOSFET 25V 0.75A Surface Mount Device Featuring 2KV ESD Protection for Power Control factory

Siliup SP2502KT2 N Channel MOSFET 25V 0.75A Surface Mount Device Featuring 2KV ESD Protection for Power Control

Key Attributes
Model Number: SP2502KT2
Product Custom Attributes
Drain To Source Voltage:
25V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
250mΩ@4.5V;350mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
19pF
Input Capacitance(Ciss):
35pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SP2502KT2
Package:
SOT-23
Product Description

Product Overview

The SP2502KT2 is a 25V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 2502
  • Package: SOT-23
  • Construction: N-Channel MOSFET
  • ESD Protection: 2KV

Technical Specifications

Parameter Symbol Conditions Value Unit
Product Summary
V(BR)DSS V(BR)DSS 25 V
RDS(on)TYP RDS(on)TYP @4.5V 250 m
RDS(on)TYP RDS(on)TYP @2.5V 350 m
ID ID 0.75 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS 25 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID 0.75 A
Pulse Drain Current IDM Tested 3 A
Power Dissipation PD 350 mW
Thermal Resistance Junction-to-Ambient RJA 357 C/W
Storage Temperature Range TSTG -55 to 150 C
Operating Junction Temperature Range TJ -55 to 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250A 25 V
Drain-Source Leakage Current IDSS VDS=20V , VGS=0V - 1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V - 10 uA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250A 0.3 0.65 1 V
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =500mA - 250 380 M
Static Drain-Source On-Resistance RDS(ON) VGS =2.5V, ID =200mA - 350 450 M
Input Capacitance Ciss VDS=10V , VGS=0V , f=1MHz - 35 - pF
Output Capacitance Coss - 19 - pF
Reverse Transfer Capacitance Crss - 9 - pF
Total Gate Charge Qg VDS=10V , VGS=4.5V , ID=500mA - 0.8 - nC
Gate-Source Charge Qgs - 0.3 - nC
Gate-Drain Charge Qg - 0.16 - nC
Turn-On Delay Time td(on) VDD=10V VGS=4.5V , RG=10 , ID=500mA - 4 - nS
Turn-On Rise Time tr - 19 - nS
Turn-Off Delay Time td(off) - 10 - nS
Turn-Off Fall Time tf - 21 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Package Information (SOT-23)
Symbol Dimensions (mm) Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e REF. 0.95
e1 1.80 2.00
L REF. 0.55
L1 0.30 0.50
0 8

2504101957_Siliup-SP2502KT2_C41354910.pdf

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