High Current 105A 30V N Channel MOSFET Siliup SP30N02BNK for Motor Control and Power Applications

Key Attributes
Model Number: SP30N02BNK
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2mΩ@10V;3.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
388pF
Number:
1 N-channel
Output Capacitance(Coss):
456pF
Input Capacitance(Ciss):
3.55nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
SP30N02BNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP30N02BNK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, a surface mount PDFN5X6-8L package, and 100% single pulse avalanche energy testing. This MOSFET is ROHS Compliant & Halogen-Free and is ideal for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP30N02BNK
  • Channel Type: N-Channel
  • Package Type: PDFN5X6-8L
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on)TYP RDS(on) @10V 2.2 2.8 m
RDS(on)TYP RDS(on) @4.5V 3.6 4.8 m
ID ID 105 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 105 A
Continuous Drain Current (Tc=100C) ID 70 A
Pulse Drain Current IDM Tested 420 A
Single pulsed avalanche energy EAS 441 mJ
Power Dissipation (Tc=25C) PD 60 W
Thermal Resistance Junction-to-Case RJC 2.1 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =30A - 2.2 2.8 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =20A - 3.6 4.8 m
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 3550 - pF
Output Capacitance Coss - 456 - pF
Reverse Transfer Capacitance Crss - 388 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=30A - 75 - nC
Gate-Source Charge Qgs - 12 - nC
Gate-Drain Charge Qg d - 18.3 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=15 VGS=4.5V , RG=1.8, ID=60A - 11 - nS
Rise Time Tr - 20 - nS
Turn-Off Delay Time Td(off) - 60 - nS
Fall Time Tf - 29 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 105 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 19 - nS
Reverse recovery charge Qrr - 7 - nC
Package Dimensions (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 - 1.000 0.035 - 0.039
A3 0.254REF. 0.010REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 3.910 - 4.110 0.154 - 0.162
E1 3.375 - 3.575 0.133 - 0.141
D2 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270TYP. 0.050TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

2504101957_Siliup-SP30N02BNK_C42372340.pdf

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