Power MOSFET Siliup SP40N01AAGTO 40V N Channel with Low On Resistance and Fast Switching Performance
Product Overview
The SP40N01AAGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy. This MOSFET is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP40N01AAGTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 0.55 | m | |||
| RDS(on)TYP | @4.5V | 0.8 | m | |||
| ID | 600 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 600 | A | |||
| Continuous Drain Current (Tc=100) | ID | 400 | A | |||
| Pulsed Drain Current | IDM | 2400 | A | |||
| Single Pulse Avalanche Energy | EAS | 2214 | mJ | |||
| Power Dissipation (Tc=25) | PD | 425 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.29 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | 45 | V | |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | 0.55 | 0.68 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | 0.8 | 1.1 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | 14600 | pF | ||
| Output Capacitance | Coss | 3550 | pF | |||
| Reverse Transfer Capacitance | Crss | 145 | pF | |||
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=80A | 218 | nC | ||
| Gate-Source Charge | Qgs | 44.5 | ||||
| Gate-Drain Charge | Qg | 33 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6 ID=80A | 26.5 | nS | ||
| Rise Time | Tr | 103.8 | ||||
| Turn-Off Delay Time | Td(off) | 112 | ||||
| Fall Time | Tf | 116.6 | ||||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 370 | A | |||
| Reverse Recovery Time | Trr | IS=50A, di/dt=200A/us, TJ=25 | 90 | nS | ||
| Reverse Recovery Charge | Qrr | 156 | nC | |||
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP40N01AAGTO | TOLL | 2000 |
Marking: SP40N01AAGTO: Device Code, : Week Code
TOLL Package Information (Dimensions in Millimeters):
| Symbol | Min. | Nom. | Max. |
|---|---|---|---|
| A | 2.20 | 2.30 | 2.40 |
| b | 0.65 | 0.75 | 0.85 |
| C | 0.508 | REF. | |
| D | 10.25 | 10.40 | 10.55 |
| D1 | 2.85 | 3.00 | 3.15 |
| E | 9.75 | 9.90 | 10.05 |
| E1 | 9.65 | 9.80 | 9.95 |
| E2 | 8.95 | 9.10 | 9.25 |
| E3 | 7.25 | 7.40 | 7.55 |
| e | 1.20 | BSC | |
| F | 1.05 | 1.20 | 1.35 |
| H | 11.55 | 11.70 | 11.85 |
| H1 | 6.03 | 6.18 | 6.33 |
| H2 | 6.85 | 7.00 | 7.15 |
| H3 | 3.00 | BSC | |
| L | 1.55 | 1.70 | 1.85 |
| L1 | 0.55 | 0.7 | 0.85 |
| L2 | 0.45 | 0.6 | 0.75 |
| M | 0.08 | REF. | |
| 8 | 10 | 12 | |
| K | 4.25 | 4.40 | 4.55 |
2412041501_Siliup-SP40N01AAGTO_C42404758.pdf
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