Power MOSFET Siliup SP40N01AAGTO 40V N Channel with Low On Resistance and Fast Switching Performance

Key Attributes
Model Number: SP40N01AAGTO
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
600A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 N-channel
Output Capacitance(Coss):
3.55nF
Input Capacitance(Ciss):
14.6nF
Pd - Power Dissipation:
425W
Gate Charge(Qg):
218nC
Mfr. Part #:
SP40N01AAGTO
Package:
TOLL
Product Description

Product Overview

The SP40N01AAGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy. This MOSFET is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management systems.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP40N01AAGTO
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: TOLL

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS 40 V
RDS(on)TYP @10V 0.55 m
RDS(on)TYP @4.5V 0.8 m
ID 600 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 600 A
Continuous Drain Current (Tc=100) ID 400 A
Pulsed Drain Current IDM 2400 A
Single Pulse Avalanche Energy EAS 2214 mJ
Power Dissipation (Tc=25) PD 425 W
Thermal Resistance Junction-to-Case RJC 0.29 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 45 V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A 0.55 0.68 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=20A 0.8 1.1 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz 14600 pF
Output Capacitance Coss 3550 pF
Reverse Transfer Capacitance Crss 145 pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=80A 218 nC
Gate-Source Charge Qgs 44.5
Gate-Drain Charge Qg 33
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20V , VGS=10V , RG=1.6 ID=80A 26.5 nS
Rise Time Tr 103.8
Turn-Off Delay Time Td(off) 112
Fall Time Tf 116.6
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 V
Maximum Body-Diode Continuous Current IS 370 A
Reverse Recovery Time Trr IS=50A, di/dt=200A/us, TJ=25 90 nS
Reverse Recovery Charge Qrr 156 nC

Order Information:

Device Package Unit/Tape
SP40N01AAGTO TOLL 2000

Marking: SP40N01AAGTO: Device Code, : Week Code

TOLL Package Information (Dimensions in Millimeters):

Symbol Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 REF.
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF.
8 10 12
K 4.25 4.40 4.55

2412041501_Siliup-SP40N01AAGTO_C42404758.pdf

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