SP60N03GHTQ Power MOSFET 60V N Channel Featuring Low RDSon and Fast Switching for Power Applications
Key Attributes
Model Number:
SP60N03GHTQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Output Capacitance(Coss):
975pF
Input Capacitance(Ciss):
4.25nF
Pd - Power Dissipation:
145W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP60N03GHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP60N03GHTQ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N03GHTQ
- Device Code: 60N03GH
- Package: TO-220-3L
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 60 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 3.7 | m | ||
| ID | ID | 140 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 140 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 95 | A | |||
| Pulse Drain Current Tested | IDM | 560 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 784 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 145 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.86 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 2 | 2.5 | 4 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - | 3.7 | 4.7 | m |
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 4250 | - | pF |
| Output Capacitance | Coss | - | 975 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 41 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | 12 | - | nC | |
| Gate-Drain Charge | Qgd | - | 10 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=3 | - | 13.5 | - | nS |
| Rise Time | tr | - | 96 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 40 | - | nS | |
| Fall Time | tf | - | 115 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 140 | A | |
| Reverse Recovery Time | trr | IS=60 A, di/dt=100 A/s, TJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 30 | - | nC | |
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 (TYP.) | 0.100 (TYP.) | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 (REF.) | 0.276 (REF.) | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
Note 1: The test condition for EAS is VDD=30V, VGS=10V, L=0.5mH, RG=25.
2504101957_Siliup-SP60N03GHTQ_C22385391.pdf
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