Power Management 30V Dual P Channel MOSFET Siliup SP30P25DNJ with Fast Switching and Low On Resistance
Key Attributes
Model Number:
SP30P25DNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
25mΩ@10V;36mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
112pF
Number:
2 P-Channel
Output Capacitance(Coss):
116pF
Input Capacitance(Ciss):
850pF
Pd - Power Dissipation:
16W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SP30P25DNJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP30P25DNJ is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC Converters and Power Management. It is available in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P25DNJ
- Device Code: 30P25D
- Package: PDFN3X3-8L
- Technology: Siliup Semiconductor Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on)TYP | RDS(on)TYP | @-4.5V | 25 | m | ||
| @-2.5V | 36 | m | ||||
| ID | ID | -10 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -10 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -7 | A | |||
| Pulse Drain Current Tested | IDM | -40 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 36 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 16 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 7.8 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-4A | - | 25 | 32 | m |
| VGS=-4.5V, ID=-2A | - | 36 | 45 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 850 | - | pF |
| Output Capacitance | Coss | - | 116 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 112 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-6.5A | - | 13 | - | nC |
| Gate-Source Charge | Qgs | - | 2.6 | - | ||
| Gate-Drain Charge | Qgd | - | 2.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=3, ID=-4A | - | 7.5 | - | nS |
| Rise Time | Tr | - | 5.5 | - | ||
| Turn-Off Delay Time | Td(off) | - | 19 | - | ||
| Fall Time | Tf | - | 7 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -10 | A | |
| Reverse recovery time | Trr | IS=-5A, di/dt=-100A/us, Tj=25 | - | 0.9 | - | nS |
| Reverse recovery charge | Qrr | - | 7 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
| Min. | Max. | Min. | Max. | |||
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 | REF. | 0.006 | REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 0.935 | 1.135 | 0.037 | 0.045 | ||
| D2 | 0.280 | 0.480 | 0.011 | 0.019 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
Note: 1 The EAS test condition is VDD=-15V, VG=-10V, L=0.5mH, Rg=25.
2504101957_Siliup-SP30P25DNJ_C41355085.pdf
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