252 Package N Channel MOSFET Siliup SP010N35TH Featuring Low RDS on and High Drain Current for Load Switching
Key Attributes
Model Number:
SP010N35TH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
25A
RDS(on):
35mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
63pF
Number:
1 N-channel
Output Capacitance(Coss):
102pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
2.631nF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
SP010N35TH
Package:
TO-252
Product Description
Product Overview
The SP010N35TH is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) at different voltage levels (35m@10V, 40m@4.5V). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching. The device comes in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP010N35
- Package: TO-252
- Channel Type: N-Channel
- Voltage Rating: 100V
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | 25 | A | |||
| Continuous Drain Current (TC=100) | ID | 17 | A | |||
| Pulsed Drain Current | IDM | 100 | A | |||
| Single Pulse Avalanche Energy | EAS | 72 | mJ | |||
| Power Dissipation (TC=25) | PD | 50 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=10A | - | 35 | 50 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=6A | - | 40 | 55 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 2631 | - | pF |
| Output Capacitance | Coss | - | 102 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 63 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=25A | - | 45 | - | nC |
| Gate-Source Charge | Qgs | - | 7.9 | - | ||
| Gate-Drain Charge | Qg | - | 8.7 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V VGS=10V , RG=3, ID=10A | - | 9 | - | nS |
| Rise Time | Tr | - | 8 | - | ||
| Turn-Off Delay Time | Td(off) | - | 32 | - | ||
| Fall Time | Tf | - | 9 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 25 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 40 | - | nS |
| Reverse Recovery Charge | Qrr | - | 47 | - | nC | |
| TO-252 Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | REF. |
| A | 2.200 | 2.400 | |
| A1 | 0.000 | 0.127 | |
| b | 0.660 | 0.860 | |
| c | 0.460 | 0.580 | |
| D | 6.500 | 6.700 | |
| D1 | 5.100 | 5.460 | |
| D2 | 4.830 | ||
| E | 6.000 | 6.200 | |
| e | 2.186 | 2.386 | |
| L | 9.800 | 10.400 | |
| L1 | 2.900 | ||
| L2 | 1.400 | 1.700 | |
| L3 | 1.600 | ||
| L4 | 0.600 | 1.000 | |
| 1.100 | 1.300 | ||
| 0 | 8 | ||
| h | 0.000 | 0.300 | |
| V | 5.350 | ||
2504101957_Siliup-SP010N35TH_C41354988.pdf
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