60V N Channel MOSFET Siliup SP60N02BGTH Featuring Low Gate Charge and Split Gate Trench Technology for Power
Key Attributes
Model Number:
SP60N02BGTH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8mΩ@10V;3.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
136pF
Number:
1 N-channel
Output Capacitance(Coss):
2.201nF
Input Capacitance(Ciss):
5.441nF
Pd - Power Dissipation:
115W
Gate Charge(Qg):
101nC@10V
Mfr. Part #:
SP60N02BGTH
Package:
TO-252
Product Description
Product Overview
The SP60N02BGTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N02BGTH
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on)TYP | @10V | 2.8 | m | |||
| RDS(on)TYP | @4.5V | 3.2 | m | |||
| ID | 140 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 140 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 95 | A | |||
| Pulse Drain Current Tested | IDM | 560 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 487 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 115 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.09 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.2 | 1.7 | 2.2 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=40A | - | 2.8 | 3.5 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=40A | - | 3.2 | 4.3 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 5441 | - | pF |
| Output Capacitance | Coss | - | 2201 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 136 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=30A | - | 101 | - | nC |
| Gate-Source Charge | Qgs | - | 17 | - | ||
| Gate-Drain Charge | Qgd | - | 21 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V, RG=3 | - | 15 | - | nS |
| Rise Time | tr | - | 34 | - | ||
| Turn-Off Delay Time | td(off) | - | 76 | - | ||
| Fall Time | tf | - | 95 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 140 | A | |
| Reverse Recovery Time | trr | IS=30 A,di/dt=100 A/sTJ=25 | - | 54 | - | nS |
| Reverse Recovery Charge | Qrr | - | 61 | - | nC | |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
| Min. | Max. | Min. | Max. | |||
| A | 2.200 | 2.400 | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 | 6.200 | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | |||
| 0 | 8 | 0 | 8 | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP60N02BGTH_C22385377.pdf
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