Siliup SP60N01BGHMT Power MOSFET 60V N Channel with Low Gate Charge and High Continuous Drain Current
Key Attributes
Model Number:
SP60N01BGHMT
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
88pF
Number:
1 N-channel
Output Capacitance(Coss):
2.17nF
Pd - Power Dissipation:
356W
Input Capacitance(Ciss):
7.82nF
Gate Charge(Qg):
138nC@10V
Mfr. Part #:
SP60N01BGHMT
Package:
STOLL-8L
Product Description
Product Overview
The SP60N01BGHMT is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low Rdson. This MOSFET is ideal for PWM applications, hard-switched and high-frequency circuits, and power management systems. It features 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60N01BGHMT
- Package: sTOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 1.2 | m | ||
| Continuous Drain Current | ID | 340 | A | |||
| Features | ||||||
| Fast Switching, Low Gate Charge and Rdson, Advanced Split Gate Trench Technology, 100% Single Pulse avalanche energy Test | ||||||
| Applications | ||||||
| PWM Application, Hard switched and high frequency circuits, Power Management | ||||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current (Tc=25) | ID | (Ta=25, unless otherwise noted) | 340 | A | ||
| Continuous Drain Current (Tc=100) | ID | (Ta=25, unless otherwise noted) | 227 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 1360 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25, unless otherwise noted) | 1465 | mJ | ||
| Total Power Dissipation (Tc=25) | PD | (Ta=25, unless otherwise noted) | 356 | W | ||
| Thermal Resistance Junction-to-Case | RJC | (Ta=25, unless otherwise noted) | 0.35 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 1.2 | 1.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 7820 | - | pF |
| Output Capacitance | Coss | VDS=20V , VGS=0V , f=1MHz | - | 2170 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V , VGS=0V , f=1MHz | - | 88 | - | pF |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 138 | - | nC |
| Gate-Source Charge | Qgs | VDS=20V , VGS=10V , ID=85A | - | 39 | - | nC |
| Gate-Drain Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 32 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6, ID=85A | - | 18 | - | nS |
| Rise Time | Tr | VDD=20V , VGS=10V , RG=1.6, ID=85A | - | 72 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=20V , VGS=10V , RG=1.6, ID=85A | - | 108 | - | nS |
| Fall Time | Tf | VDD=20V , VGS=10V , RG=1.6, ID=85A | - | 78 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | VGS=0V , IS=1A , TJ=25 | - | - | 340 | A |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Reverse Recovery Charge | Qrr | IS=50A, di/dt=100A/us, TJ=25 | - | 53 | - | nC |
| Package Information (sTOLL) | ||||||
| Symbol | MIN | NOM | MAX | Units | ||
| A | 2.262 | 2.300 | 2.338 | mm | ||
| A3 | 0.492 | 0.500 | 0.508 | mm | ||
| D | 7.950 | 8.000 | 8.050 | mm | ||
| D5 | 6.650 | 6.700 | 6.750 | mm | ||
| E | 6.950 | 7.000 | 7.050 | mm | ||
| e | 1.30 | BCS | ||||
| e1 | 1.60 | BCS | ||||
| D1 | 0.130 | ref | ||||
| D2 | 5.150 | 5.200 | 5.250 | mm | ||
| D3 | 2.520 | 2.570 | 2.620 | mm | ||
| D4 | 2.450 | 2.500 | 2.550 | mm | ||
| b | 0.750 | 0.800 | 0.850 | mm | ||
| b1 | 0.350 | ref | ||||
| b2 | 0.350 | 0.450 | 0.550 | mm | ||
| b3 | 0.400 | 0.425 | 0.450 | mm | ||
| b4 | 1.100 | 1.200 | 1.300 | mm | ||
| b5 | 1.550 | 1.650 | 1.750 | mm | ||
| L | 1.100 | 1.150 | 1.200 | mm | ||
| L1 | 0.650 | 0.700 | 0.750 | mm | ||
| L2 | 0.550 | 0.600 | 0.650 | mm | ||
| L3 | 0.850 | 0.900 | 0.950 | mm | ||
| L4 | 0.185 | 0.235 | 0.285 | mm | ||
| E1 | 6.850 | 6.900 | 6.950 | mm | ||
| E2 | 5.910 | 5.960 | 6.010 | mm | ||
| E3 | 5.610 | 5.660 | 5.710 | mm | ||
| E4 | 6.510 | 6.560 | 6.610 | mm | ||
| K1 | 2.430 | ref | ||||
| K2 | 1.970 | ref | ||||
| K3 | 2.275 | 2.300 | 2.325 | mm | ||
2508111740_Siliup-SP60N01BGHMT_C50199170.pdf
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