Surface Mount SOT 223 Package N Channel MOSFET Siliup SP6003TC Featuring 3A Continuous Drain Current Rating
Key Attributes
Model Number:
SP6003TC
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V;90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
330pF
Gate Charge(Qg):
5.1nC@4.5V
Mfr. Part #:
SP6003TC
Package:
SOT-223
Product Description
Product Overview
The SP6003TC is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical on-resistance of 80m at 10V and 90m at 4.5V, with a continuous drain current rating of 3A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP6003TC
- Type: N-Channel MOSFET
- Package: SOT-223
- Device Code: 6003
- Origin: China (implied by company name and website)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @10V | 80 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 90 | m | ||
| Continuous Drain Current | ID | 3 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 3 | A | |||
| Pulse Drain Current | IDM | Tested | 12 | A | ||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 83 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.9 | 1.3 | 2.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =3A | - | 80 | 100 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =2A | - | 90 | 120 | m |
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 330 | - | pF |
| Output Capacitance | Coss | - | 90 | - | ||
| Reverse Transfer Capacitance | Crss | - | 17 | - | ||
| Total Gate Charge | Qg | VDS=30V , VGS=4.5V , ID=3A | - | 5.1 | - | nC |
| Gate-Source Charge | Qgs | - | 1.3 | - | ||
| Gate-Drain Charge | Qg d | - | 1.7 | - | ||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=3, ID=2A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 7 | - | ||
| Turn-Off Delay Time | td(off) | - | 36 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information: SOT-223 | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min | Max | Min | Max |
| A | 1.520 | 1.800 | 0.060 | 0.071 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 1.500 | 1.700 | 0.059 | 0.067 | ||
| b | 0.660 | 0.820 | 0.026 | 0.032 | ||
| c | 0.250 | 0.350 | 0.010 | 0.014 | ||
| D | 6.200 | 6.400 | 0.244 | 0.252 | ||
| D1 | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E | 3.300 | 3.700 | 0.130 | 0.146 | ||
| E1 | 6.830 | 7.070 | 0.269 | 0.278 | ||
| e | 2.300(BSC) | 0.091(BSC) | ||||
| e1 | 4.500 | 4.700 | 0.177 | 0.185 | ||
| L | 0.900 | 1.150 | 0.035 | 0.045 | ||
| 0 | 10 | 0 | 10 | |||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP6003TC | SOT-223 | 4000 | ||||
2504101957_Siliup-SP6003TC_C41354928.pdf
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