60V N Channel Power MOSFET Siliup SP60N01BGMT designed for PWM and high frequency power management systems

Key Attributes
Model Number: SP60N01BGMT
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340A
RDS(on):
1.15mΩ@10V;1.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
88pF
Number:
1 N-channel
Pd - Power Dissipation:
360W
Output Capacitance(Coss):
2.17nF
Input Capacitance(Ciss):
7.82nF
Gate Charge(Qg):
138nC@10V
Mfr. Part #:
SP60N01BGMT
Package:
STOLL-8L
Product Description

Product Overview

The SP60N01BGMT is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered for high-performance applications. It features fast switching, low gate charge, and low Rdson, utilizing advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management systems.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP60N01BGMT
  • Package: sTOLL

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
V(BR)DSS 60 V
RDS(on)TYP @10V 1.15 m
RDS(on)TYP @4.5V 1.5 m
ID 340 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 340 A
Continuous Drain Current (Tc=100) ID 227 A
Pulsed Drain Current IDM 1360 A
Single Pulse Avalanche Energy EAS 1488 mJ
Total Power Dissipation (Tc=25) PD 360 W
Thermal Resistance Junction-to-Case RJC 0.35 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 - - V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=50A - 1.15 1.45 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=50A - 1.5 2 m
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 7820 - pF
Output Capacitance Coss - 2170 - pF
Reverse Transfer Capacitance Crss - 88 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=85A - 138 - nC
Gate-Source Charge Qgs - 39 - nC
Gate-Drain Charge Qg - 32 - nC
Turn-On Delay Time Td(on) VDD=20V , VGS=10V , RG=1.6, ID=85A - 18 - nS
Rise Time Tr - 72 - nS
Turn-Off Delay Time Td(off) - 108 - nS
Fall Time Tf - 78 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 340 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 - 65 - nS
Reverse Recovery Charge Qrr - 53 - nC
Package Information (sTOLL)
Symbol Dimensions (mm) MIN Dimensions (mm) NOM Dimensions (mm) MAX
A 2.262 2.300 2.338
A3 0.492 0.500 0.508
D 7.950 8.000 8.050
D5 6.650 6.700 6.750
E 6.950 7.000 7.050
e 1.30 BCS
e1 1.60 BCS
D1 0.130 ref
D2 5.150 5.200 5.250
D3 2.520 2.570 2.620
D4 2.450 2.500 2.550
b 0.750 0.800 0.850
b1 0.350 ref
b2 0.350 0.450 0.550
b3 0.400 0.425 0.450
b4 1.100 1.200 1.300
b5 1.550 1.650 1.750
L 1.100 1.150 1.200
L1 0.650 0.700 0.750
L2 0.550 0.600 0.650
L3 0.850 0.900 0.950
L4 0.185 0.235 0.285
E1 6.850 6.900 6.950
E2 5.910 5.960 6.010
E3 5.610 5.660 5.710
E4 6.510 6.560 6.610
K1 2.430 ref
K2 1.970 ref
K3 2.275 2.300 2.325

2508111740_Siliup-SP60N01BGMT_C50199169.pdf

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