Power Switching MOSFET Siliup SP30N08P8 30V N Channel Device with Low RDS on and Fast Switching

Key Attributes
Model Number: SP30N08P8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.3A
RDS(on):
8.5mΩ@10V;11mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
131pF
Number:
-
Output Capacitance(Coss):
163pF
Input Capacitance(Ciss):
1.317nF
Pd - Power Dissipation:
2.3W
Gate Charge(Qg):
12.6nC@10V
Mfr. Part #:
SP30N08P8
Package:
SOP-8L
Product Description

Product Overview

The SP30N08P8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) at various gate voltages, making it suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP30N08P8
  • Channel Type: N-Channel
  • Package Type: SOP-8L
  • Origin: China (implied by company name and website)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
Static Drain-Source On-Resistance RDS(on)TYP @10V 8.5 m
Static Drain-Source On-Resistance RDS(on)TYP @4.5V 11 m
Continuous Drain Current ID 10.3 A
Features
Fast Switching
Low Gate Charge and Rdson
100% Single Pulse avalanche energy Test
Applications
Power Switching Application
Hard switched and high frequency circuits
Uninterruptible Power Supply
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 30 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25) 10.3 A
Pulsed Drain Current IDM 41.2 A
Single Pulse Avalanche Energy EAS 6 mJ
Power Dissipation PD (Tc=25) 2.3 W
Thermal Resistance Junction-to-Ambient RJA 54 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.2 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=5A - 8.5 10.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=4A - 11 15 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1317 - pF
Output Capacitance Coss - 163 - pF
Reverse Transfer Capacitance Crss - 131 - pF
Total Gate Charge Qg VDS=25V , VGS=10V , ID=12A - 12.6 - nC
Gate-Source Charge Qgs - 4.2 - nC
Gate-Drain Charge Qg d - 5.1 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=15V , VGS=10V , RG=3.3, ID=10A - 6.2 - nS
Rise Time Tr - 59 - nS
Turn-Off Delay Time Td(off) - 27.6 - nS
Fall Time Tf - 8.4 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 10.3 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 - 21 - nS
Reverse Recovery Charge Qrr - 8 - nC
Package Information
Package Type SOP-8L
Dimensions (Millimeters) A 1.35 1.75
Dimensions (Millimeters) A1 0.10 0.25
Dimensions (Millimeters) A2 1.35 1.55
Dimensions (Millimeters) b 0.33 0.51
Dimensions (Millimeters) c 0.17 0.25
Dimensions (Millimeters) D 4.80 5.00
Dimensions (Millimeters) e (REF.) 1.27
Dimensions (Millimeters) E 5.80 6.20
Dimensions (Millimeters) E1 3.80 4.00
Dimensions (Millimeters) L 0.40 1.27
Dimensions (Millimeters) () 0 8
Marking 30N08 :Device Code ** :Week Code
Order Information Device Package Unit/Tape
SP30N08P8 SOP-8L 4000

2504101957_Siliup-SP30N08P8_C41354872.pdf

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