Siliup Semiconductor SP25HF65TQ 650V Super Junction MOSFET with Low On Resistance and Fast Switching
Key Attributes
Model Number:
SP25HF65TQ
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
25A
RDS(on):
96mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
7.4pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.788nF
Output Capacitance(Coss):
68pF
Pd - Power Dissipation:
196W
Gate Charge(Qg):
63nC@10V
Mfr. Part #:
SP25HF65TQ
Package:
TO-220-3L
Product Description
Product Overview
The SP25HF65TQ is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for PWM applications, hard-switched and high-frequency circuits, and power management. The device is 100% single pulse avalanche energy tested.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP25HF65TQ
- Package Type: TO-220-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 650 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 96 | m | ||
| Continuous Drain Current | ID | 25 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 650 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 30 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 25 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 16.7 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | 100 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25) | 414 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 196 | W | ||
| Thermal Resistance (Junction-to-Case) | RJC | 0.64 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | V | ||
| Drain-Source Leakage Current | IDSS | VDS = 520V, VGS = 0V | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 | 3.5 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 10A | 96 | 120 | m | |
| Input Capacitance | Ciss | VDS=100V , VGS=0V , f=1MHz | 2788 | pF | ||
| Output Capacitance | Coss | VDS=100V , VGS=0V , f=1MHz | 68 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=100V , VGS=0V , f=1MHz | 7.4 | pF | ||
| Total Gate Charge | Qg | VDS=400V , VGS=0-10V , ID=10A | 63 | nC | ||
| Gate-Source Charge | Qgs | VDS=400V , VGS=0-10V , ID=10A | 24 | nC | ||
| Gate-Drain Charge | Qgd | VDS=400V , VGS=0-10V , ID=10A | 22 | nC | ||
| Turn-On Delay Time | Td(on) | VDD=400V, VGS=10V , RG=2, ID=10A | 67 | nS | ||
| Rise Time | Tr | VDD=400V, VGS=10V , RG=2, ID=10A | 71 | nS | ||
| Turn-Off Delay Time | Td(off) | VDD=400V, VGS=10V , RG=2, ID=10A | 165 | nS | ||
| Fall Time | Tf | VDD=400V, VGS=10V , RG=2, ID=10A | 46 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 26 | A | |||
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, Tj=25 | 195 | nS | ||
| Reverse recovery charge | Qrr | IS=10A, di/dt=100A/us, Tj=25 | 1264 | uC | ||
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2506271720_Siliup-SP25HF65TQ_C49257236.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
