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quality 100V N Channel MOSFET SP010N02GHTQ Featuring Low Gate Charge and Fast Switching in TO 220 3L Package factory
quality 100V N Channel MOSFET SP010N02GHTQ Featuring Low Gate Charge and Fast Switching in TO 220 3L Package factory

100V N Channel MOSFET SP010N02GHTQ Featuring Low Gate Charge and Fast Switching in TO 220 3L Package

Key Attributes
Model Number: SP010N02GHTQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
270A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
2.034nF
Input Capacitance(Ciss):
13.42nF
Pd - Power Dissipation:
260W
Gate Charge(Qg):
156nC@10V
Mfr. Part #:
SP010N02GHTQ
Package:
TO-220-3L
Product Description

Product Overview

The SP010N02GHTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It comes in a TO-220-3L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N02GH
  • Package Type: TO-220-3L
  • Channel Type: N-Channel
  • Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (Tc=25) ID 270 A
Continuous Drain Current (Tc=100) ID 180 A
Pulsed Drain Current IDM 1080 A
Single Pulse Avalanche Energy EAS 1560 mJ
Power Dissipation (Tc=25) PD 260 W
Thermal Resistance Junction-to-Case RJC 0.48 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 100 V
Drain Cut-Off Current IDSS VDS=80V , VGS=0V , TJ=25 1 µA
Gate Leakage Current IGSS VGS=±20V , VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 2.8 4 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=20A 2.2 2.75 mΩ
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz 13420 pF
Output Capacitance Coss 2034 pF
Reverse Transfer Capacitance Crss 48 pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=125A 156 nC
Gate-Source Charge Qgs 51 nC
Gate-Drain Charge Qg d 45 nC
Turn-On Delay Time td(on) VDD=50V, VGS=10V , RG=1.6Ω, ID=125A 35 nS
Rise Time tr 68 nS
Turn-Off Delay Time td(off) 150 nS
Fall Time tf 105 nS
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V 1.2 V
Maximum Body-Diode Continuous Current IS 270 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 106 nS
Reverse Recovery Charge Qrr 328 nC

Package Information (TO-220-3L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
Φ 3.400 3.800 0.134 0.150

2504101957_Siliup-SP010N02GHTQ_C42403240.pdf

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