P Channel MOSFET Siliup SP40P10TH offering 40V drain source voltage and low RDSon in TO 252 package
Key Attributes
Model Number:
SP40P10TH
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.5mΩ@10V;14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
222pF
Number:
1 P-Channel
Output Capacitance(Coss):
323pF
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
3.5nF
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
SP40P10TH
Package:
TO-252-2L
Product Description
Product Overview
The SP40P10TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low RDS(on), with RDS(on) typically 10.5m at -10V and 14m at -4.5V. This MOSFET is 100% tested for single pulse avalanche energy. It is suitable for applications such as DC-DC converters and load switching. The device is packaged in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40P10
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |||
| RDS(on) | @-10V | 10.5 | 13 | m | ||
| RDS(on) | @-4.5V | 14 | 18 | m | ||
| ID | -40 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | -40 | A | |||
| Continuous Drain Current (TC=100) | ID | -27 | A | |||
| Pulsed Drain Current | IDM | -160 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 144 | mJ | |||
| Power Dissipation (TC=25) | PD | 75 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.7 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-12A | 10.5 | 13 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-10A | 14 | 18 | m | |
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 3500 | pF | ||
| Output Capacitance | Coss | 323 | pF | |||
| Reverse Transfer Capacitance | Crss | 222 | pF | |||
| Total Gate Charge | Qg | VDS=-25V , VGS=-10V , ID=-25A | 72 | nC | ||
| Gate-Source Charge | Qgs | 8 | nC | |||
| Gate-Drain Charge | Qgd | 15 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-25V,VGS=-10V,RG=6, ID=-25A | 12 | nS | ||
| Rise Time | Tr | 10 | nS | |||
| Turn-Off Delay Time | Td(off) | 203 | nS | |||
| Fall Time | Tf | 91 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -40 | A | |||
| Reverse Recovery Time | Trr | IS=-25A, di/dt=100A/us, TJ=25 | 24 | nS | ||
| Reverse Recovery Charge | Qrr | 12 | nC | |||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
2504101957_Siliup-SP40P10TH_C41355195.pdf
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